01 / 产品信息
产品概述
AOS MOSFET AON6512 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- AOS
- 型号
- AON6512
- 品类
- MOSFET
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
40 项结构与连接
- Continuous Drain TC=25°C
- 210
- Continuous Drain TA=25°C
- 54
- Avalanche energy L=0.05mH C
- 123 mJ
- VDS Spike 100ns
- 36 V
- Power Dissipation B TC=100°C
- 45
- Power Dissipation A TA=70°C
- 4.7
- Maximum Junction-to-Ambient A t ≤ 10s
- 14 °C/W
- Maximum Junction-to-Ambient A D Steady-State
- 40 °C/W
- Maximum Junction-to-Case Steady-State RqJC
- 0.8 °C/W
- VDS=30V, VGS=0V
- 1
- VGS=10V, ID=20A
- 1.4
- VGS=4.5V, ID=20A
- 1.9 mW
- gFS Forward Transconductance VDS=5V, ID=20A
- 85 S
- Ciss Input Capacitance
- 430 pF
- Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz
- 327 pF
- Crss Reverse Transfer Capacitance
- 175 pF
- Qg(10V) Total Gate Charge
- 53 nC
- Qg(4.5V) Total Gate Charge
- 25 nC
- Qgs Gate Source Charge
- 7.8 nC
- Qgd Gate Drain Charge
- 10.3 nC
- tD(on) Turn-On DelayTime
- 7.5 ns
- tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75W
- 5.0 ns
- tD(off) Turn-Off DelayTime RGEN=3W
- 33.8 ns
- tf Turn-Off Fall Time
- 9.8 ns
- trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/ms
- 22 ns
- Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ms
- 58 nC
性能与环境
- Drain-Source Voltage
- 30 V
- Gate-Source Voltage
- ±20 V
- Current TC=100°C
- 130 A
- Current TA=70°C
- 43
- Avalanche Current C
- 70 A
- Junction and Storage Temperature Range TJ
- 55 to 150 °C
- BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V
- 30 V
- IGSS Gate-Body leakage current VDS=0V, VGS= ±20V
- 100 nA
- VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA
- 1.5 V
- RDS(ON) Static Drain-Source On-Resistance TJ=125°C
- 1.9
- VSD Diode Forward Voltage IS=1A,VGS=0V
- 0.7 V
- VSD Diode Forward Voltage IS=85A,VGS=0V
- 0.87 V
- IS Maximum Body-Diode Continuous Current
- 120 A
- Rg Gate resistance f=1MHz
- 0.7 W
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。