COMPONENT PROFILE
AOSMOSFETsAON6512
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
AOS MOSFETs AON6512 is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- AOS
- Part number
- AON6512
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
40 parametersConstruction
- Continuous Drain TC=25°C
- 210
- Continuous Drain TA=25°C
- 54
- Avalanche energy L=0.05mH C
- 123 mJ
- VDS Spike 100ns
- 36 V
- Power Dissipation B TC=100°C
- 45
- Power Dissipation A TA=70°C
- 4.7
- Maximum Junction-to-Ambient A t ≤ 10s
- 14 °C/W
- Maximum Junction-to-Ambient A D Steady-State
- 40 °C/W
- Maximum Junction-to-Case Steady-State RqJC
- 0.8 °C/W
- VDS=30V, VGS=0V
- 1
- VGS=10V, ID=20A
- 1.4
- VGS=4.5V, ID=20A
- 1.9 mW
- gFS Forward Transconductance VDS=5V, ID=20A
- 85 S
- Ciss Input Capacitance
- 430 pF
- Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz
- 327 pF
- Crss Reverse Transfer Capacitance
- 175 pF
- Qg(10V) Total Gate Charge
- 53 nC
- Qg(4.5V) Total Gate Charge
- 25 nC
- Qgs Gate Source Charge
- 7.8 nC
- Qgd Gate Drain Charge
- 10.3 nC
- tD(on) Turn-On DelayTime
- 7.5 ns
- tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75W
- 5.0 ns
- tD(off) Turn-Off DelayTime RGEN=3W
- 33.8 ns
- tf Turn-Off Fall Time
- 9.8 ns
- trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/ms
- 22 ns
- Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ms
- 58 nC
Performance
- Drain-Source Voltage
- 30 V
- Gate-Source Voltage
- ±20 V
- Current TC=100°C
- 130 A
- Current TA=70°C
- 43
- Avalanche Current C
- 70 A
- Junction and Storage Temperature Range TJ
- 55 to 150 °C
- BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V
- 30 V
- IGSS Gate-Body leakage current VDS=0V, VGS= ±20V
- 100 nA
- VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA
- 1.5 V
- RDS(ON) Static Drain-Source On-Resistance TJ=125°C
- 1.9
- VSD Diode Forward Voltage IS=1A,VGS=0V
- 0.7 V
- VSD Diode Forward Voltage IS=85A,VGS=0V
- 0.87 V
- IS Maximum Body-Diode Continuous Current
- 120 A
- Rg Gate resistance f=1MHz
- 0.7 W
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.