01 / 产品信息
产品概述
onsemi 2N7002KT1G（MOSFET-小信号/通用(N-channel)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 安森美
- 型号
- 2N7002KT1G
- 品类
- MOSFET-小信号/通用(N-channel)
- 封装
- SOT-23
- 包装
- 卷带
- 成色
- 全新原装
- 合规
- 符合 RoHS
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
35 项结构与连接
- Gate−Source ESD Rating
- 2000 V
- 2N70
- 02K, 2V7002K
- Junction−to−Ambient − Steady State (Note 3) RqJA
- 300 °C/W
- Junction−to−Ambient − t ≤ 5 s (Note 3)
- 92
- Junction−to−Ambient − Steady State (Note 4)
- 417
- Junction−to−Ambient − t ≤ 5 s (Note 4)
- 154
- VDS = 60 V TJ = 125°C
- 10
- VGS = 0 V, TJ = 25°C
- 100 nA
- VDS = 0 V, VGS = ±10
- 450 nA
- VDS = 0 V, VGS = ±5.0
- 150 nA
- VGS = 4.5 V, ID = 200 mA
- 1.33
- Forward Transconductance gFS VDS = 5 V, ID = 200 mA
- 530 mS
- Input Capacitance
- 24.5 pF
- Output Capacitance
- 4.2
- Reverse Transfer Capacitance
- 2.2
- Total Gate Charge QG(TOT)
- 0.7 nC
- Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V;
- 0.1
- Gate−to−Source Charge QGS ID = 200 mA
- 0.3
- Gate−to−Drain Charge
- 0.1
- Turn−On Delay Time td(ON)
- 12.2 ns
- Rise Time tr VGS = 10 V, VDD = 25 V
- 9.0
- Turn−Off Delay Time td(OFF) ID = 500 mA, RG = 25
- 55.8
- Fall Time tf
- 29
性能与环境
- Drain−to−Source Voltage
- 60 V
- Gate−to−Source Voltage
- ±20 V
- Operating Junction and Storage TJ
- −55 to
- Temperature Range
- +150
- Source Current (Body Diode)
- 300 mA
- Lead Temperature for Soldering Purposes
- 260
- Drain−to−Source Breakdown Voltage V(BR)DSS/TJ
- 71 V/°C
- Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C
- 1 mA
- Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20
- ±10 mA
- Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA
- 2.3 V
- Negative Threshold Temperature VGS(TH)/TJ
- 4.0 V/°C
- Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C
- 0.8 V
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。