2N7002KT1G
onsemi 2N7002KT1G (MOSFET - small-signal / general-purpose (N-channel)) is designed for motor drive, power conversion and power amplification requiring high voltage and high current. Genuine stock; Rds(on), Vceo and package thermal performance per the official datasheet. Contact us for volume pricing and stock.
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SOT-23 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- SOT-23
Product overview
onsemi 2N7002KT1G (MOSFET - small-signal / general-purpose (N-channel)) is designed for motor drive, power conversion and power amplification requiring high voltage and high current. Genuine stock; Rds(on), Vceo and package thermal performance per the official datasheet. Contact us for volume pricing and stock.
- Manufacturer
- onsemi
- Part number
- 2N7002KT1G
- Category
- Small-Signal / General-Purpose N-Channel MOSFETs
- Package
- SOT-23
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
35 parametersConstruction
- Gate−Source ESD Rating
- 2000 V
- 2N70
- 02K, 2V7002K
- Junction−to−Ambient − Steady State (Note 3) RqJA
- 300 °C/W
- Junction−to−Ambient − t ≤ 5 s (Note 3)
- 92
- Junction−to−Ambient − Steady State (Note 4)
- 417
- Junction−to−Ambient − t ≤ 5 s (Note 4)
- 154
- VDS = 60 V TJ = 125°C
- 10
- VGS = 0 V, TJ = 25°C
- 100 nA
- VDS = 0 V, VGS = ±10
- 450 nA
- VDS = 0 V, VGS = ±5.0
- 150 nA
- VGS = 4.5 V, ID = 200 mA
- 1.33
- Forward Transconductance gFS VDS = 5 V, ID = 200 mA
- 530 mS
- Input Capacitance
- 24.5 pF
- Output Capacitance
- 4.2
- Reverse Transfer Capacitance
- 2.2
- Total Gate Charge QG(TOT)
- 0.7 nC
- Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V;
- 0.1
- Gate−to−Source Charge QGS ID = 200 mA
- 0.3
- Gate−to−Drain Charge
- 0.1
- Turn−On Delay Time td(ON)
- 12.2 ns
- Rise Time tr VGS = 10 V, VDD = 25 V
- 9.0
- Turn−Off Delay Time td(OFF) ID = 500 mA, RG = 25
- 55.8
- Fall Time tf
- 29
Performance
- Drain−to−Source Voltage
- 60 V
- Gate−to−Source Voltage
- ±20 V
- Operating Junction and Storage TJ
- −55 to
- Temperature Range
- +150
- Source Current (Body Diode)
- 300 mA
- Lead Temperature for Soldering Purposes
- 260
- Drain−to−Source Breakdown Voltage V(BR)DSS/TJ
- 71 V/°C
- Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C
- 1 mA
- Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20
- ±10 mA
- Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA
- 2.3 V
- Negative Threshold Temperature VGS(TH)/TJ
- 4.0 V/°C
- Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C
- 0.8 V
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.