ZN65C1R200L
Guangdong Zhineng ZN65C1R200L (GaN HEMT Power Device) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; its Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Package
- DFN-8x8
Product overview
Guangdong Zhineng ZN65C1R200L (GaN HEMT Power Device) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; its Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- Guangdong Zhineng
- Part number
- ZN65C1R200L
- Category
- GaN Power Devices (GaN HEMT)
- Package
- DFN-8x8
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
12 parametersConstruction
- VDS, max
- 650 V
- Transient VDSS(TR)
- 750 V
- ID @Tc=25°C
- 12 A
- ID @Tc=100°C
- 7 A
- RDS(on) typ
- 200 mΩ
- QG typ
- 11.9 nC
- QRR typ
- 53 nC
- VGS(th)
- 1.85 V typ
- VGSS
- ±20 V
- Power Dissipation (PD)
- 62 W
- Package
- DFN 8x8
Performance
- Operating Temperature
- -55°C to +150°C
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.