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Wayon / Super-Junction MOSFETs

WMK80R160S

Wayon WMK80R160S (MOSFET (Super Junction, SJ)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

New & Original Prototype to volume sourcing
COMPONENT PROFILE
TO-220 generic package illustration, not a part-specific image

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TO-220 · Generic package illustration

Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓
Package reference · Not a dimension drawing
Package
TO-220

Product overview

Wayon WMK80R160S (MOSFET (Super Junction, SJ)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

Manufacturer
Wayon
Part number
WMK80R160S
Category
Super-Junction MOSFETs
Package
TO-220
Condition
New & Original
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

19 parameters

Construction

Input capacitance Ciss VDS= 100V, VGS= 0V
2480
Output capacitance Coss f = 1 MHz
56 pF
Reverse transfer capacitance Crss
2.9
Turn-on delay time td(on) VDD = 300V, ID = 10A
36
Rise time tr RG = 25Ω, VGS=10V
44 ns
Turn-off delay time td(off)
120
Fall time tf
43
Gate to source charge Qgs VDD=480V, ID=10A
11
Gate to drain charge Qgd VGS=0 to 10V
23 nC
Gate charge total Qg
46
Reverse recovery time trr VR=50V, IF=10A
450 ns
Reverse recovery charge Qrr dIF/dt=100A/μs
6.1 μC

Performance

Drain-source breakdown voltage BVDSS VGS=0 V, ID=1 mA
800 V
Gate threshold voltage VGS(th) VDS=VGS, ID=0.25mA
3.5 V
Gate leakage current, forward IGSSF VGS=20V, VDS=0V
100 nA
Gate leakage current, reverse IGSSR VGS=-20V, VDS=0V
100 nA
Gate plateau voltage Vplateau
5.6 V
Diode forward voltage VSD VGS=0 V, IF=5A
1.2 V
Peak reverse recovery current Irrm
27 A

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.