WM04P56M2
Wayon WM04P56M2 (MOSFET (Small Signal)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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SOT-23 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- SOT-23
Product overview
Wayon WM04P56M2 (MOSFET (Small Signal)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- Wayon
- Part number
- WM04P56M2
- Category
- Small-Signal MOSFETs
- Package
- SOT-23
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
26 parametersConstruction
- Power Dissipation TA=25°C
- 2 W
- VGS = 0V , VDS = -2
- 0V
- VGS = -10V, VDS =
- 20V
- Gate-Source Leakage IGSS VDS= 0V, VGS= ±20V
- ±100 nA
- VGS= -10V, ID= -5.6A
- 37
- VGS= -4.5V, ID= -3A
- 46
- Input Capacitance Ciss
- 1070
- Output Capacitance Coss
- 85 pF
- Reverse Transfer Capacitance Crss
- 75
- Total Gate Charge Qg
- 17.5
- Gate−Source Charge Qgs
- 2.8 nC
- Gate−Drain Charge Qgd
- 2.5
- Turn-on Delay Time td(on)
- 5.8
- Rise Time tr VGS= -10V, VDD= -20V
- 8
- Turn-off Delay time td(off)
- 25
- Fall Time tf
- 8.8
Performance
- Drain-Source Voltage
- 40 V
- Gate-Source Voltage
- ±20 V
- Continuous Drain Current TA=25°C
- 5.6 A
- Operating Junction and Storage Temperature Range TJ ,TSTG -5
- 5 to 150 °C
- Thermal Resistance from Junction to Ambient 2 RθJA
- 62.5 °C/W
- Drain-Source Breakdown Voltage V(BR)DSS VGS= 0V, ID= -250μA
- 40 V
- Zero Gate Voltage Drain Current IDSS VDS= -40V, VGS= 0V
- 1 μA
- Gate-Source Threshold voltage VGS(th) VDS= VGS, ID= -250μA
- 1.5 V
- Diode Forward Voltage3 VSD IS = -5.6A, VGS = 0V
- 1.2 V
- Continuous Source Current
- 5.6 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.