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Wayon / Small-Signal MOSFETs

WM04N50M

Wayon WM04N50M (MOSFET (Small Signal)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

New & Original Prototype to volume sourcing
COMPONENT PROFILE
SOT-23 generic package illustration, not a part-specific image

Isometric preview; switch to top or 3D.

SOT-23 · Generic package illustration

Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓
Package reference · Not a dimension drawing
Package
SOT-23

Product overview

Wayon WM04N50M (MOSFET (Small Signal)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

Manufacturer
Wayon
Part number
WM04N50M
Category
Small-Signal MOSFETs
Package
SOT-23
Condition
New & Original
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

24 parameters

Construction

Power Dissipation TA=25°C
1.2 W
VGS = 10V, ID = 5A
30
VGS = 4.5V, ID = 3A
38
Input Capacitance Ciss
495
Output Capacitance Coss
42 pF
Reverse Transfer Capacitance Crss
33
Total Gate Charge Qg
10
Gate-Source Charge Qgs
1.4 nC
Gate-Drain Charge Qgd
1.9
Turn-on Delay Time td(on)
15
Turn-on Rise Time tr
49.5
Turn-off Delay Time td(off)
19.2
Turn- off Fall Time tf
11

Performance

Drain-Source Voltage
40 V
Gate-Source Voltage
±20 V
Continuous Drain Current TA=25°C
5 A
Operating Junction and Storage Temperature Range TJ, TSTG
55 to 150 °C
Thermal Resistance from Junction to Ambient2 RθJA
104 °C/W
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA
40 V
Zero Gate Voltage Drain Current IDSS VDS = 40V, VGS = 0V
1 µA
Gate-body Leakage Current IGSS VDS = 0V, VGS = ±20V
±100 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA
1.5 V
Body Diode Voltage3 VSD IS = 1A, VGS = 0V
1.2 V
Continuous Source Current IS
5 A

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.