WM02DN50M3
Wayon WM02DN50M3 (MOSFET (Small Signal)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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SOT-23-6 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- SOT-23-6
Product overview
Wayon WM02DN50M3 (MOSFET (Small Signal)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- Wayon
- Part number
- WM02DN50M3
- Category
- Small-Signal MOSFETs
- Package
- SOT-23-6
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
25 parametersConstruction
- Power Dissipation TA = 25°C
- 1.5 W
- VGS = 4.5V, ID = 4.5A
- 21
- VGS = 2.5V, ID = 3.5A
- 26
- Input Capacitance Ciss
- 470
- Output Capacitance Coss
- 62 pF
- Reverse Transfer Capacitance Crss
- 52
- Total Gate Charge Qg
- 11
- Gate−Source Charge Qgs
- 2.3 nC
- Gate−Drain Charge Qgd
- 2.5
- Turn-on Time td(on)
- 18
- Rise Time tr
- 5
- Turn-off Time td(off)
- 43
- Fall Time tf
- 20
- Rev.6.1,2024 www.way-on.com
- 6/6
Performance
- Drain-Source Voltage
- 20 V
- Gate-Source Voltage
- ±12 V
- Continuous Drain Current TA = 25°C
- 5 A
- Operating Junction and Storage Temperature Range TJ ,TSTG
- 55 to 150 °C
- Thermal Resistance from Junction to Ambient2 RθJA
- 83.3 C/W
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA
- 20 --V
- Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V
- 1 µA
- Gate-body Leakage Current IGSS VDS = 0V, VGS = ±12V
- ±100 nA
- Gate threshold voltage VGS(th) VDS = VGS, ID = 250µA
- 0.7 V
- Body Diode Voltage3 VSD IS=1.7A, VGS = 0V
- 1.2 V
- Continuous Source Current IS
- 5 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.