WM01P60M
Wayon WM01P60M (MOSFET (Small Signal)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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SOT-23 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- SOT-23
Product overview
Wayon WM01P60M (MOSFET (Small Signal)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- Wayon
- Part number
- WM01P60M
- Category
- Small-Signal MOSFETs
- Package
- SOT-23
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
23 parametersConstruction
- Power Dissipation1
- 1.8 W
- VGS= -4.5V,ID= -5A
- 20
- VGS= -1.8V,ID= -1A
- 42
- Input Capacitance Ciss
- 1620
- Output Capacitance Coss
- 445 pF
- Reverse Transfer Capacitance Crss
- 420
- Total Gate Charge4 Qg
- 14
- Gate−Source Charge4 Qgs
- 2.3 nC
- Gate−Drain Charge4 Qgd
- 3.6
- Turn-on Delay Time4 td(on)
- 26
- Rise Time4 tr
- 24
- Turn-off Delay Time4 td(off)
- 45
- Fall Time4 tf
- 20
Performance
- Drain-Source Voltage
- 12 V
- Gate-Source Voltage
- ±8 V
- Continuous Drain Current
- 6 A
- Junction and Storage Temperature Range TJ ,TSTG -5
- 5 to +150 °C
- Thermal Resistance from Junction to Ambient2 RθJA
- 69 °C/W
- Zero Gate Voltage Drain Current IDSS VDS = -12V, VGS = 0V
- 1 μA
- Gate-Body Leakage Current lGSS VDS = 0V, VGS = ±8V
- ±100 nA
- Gate-Threshold Voltage3 VGS(th) VDS = VGS, ID = -250µA
- 1 V
- Drain-Source on-Resistance3 RDS(on) VGS= -2.5V,ID= -4.3A
- 30 mΩ
- Diode Forward Voltage 3 VSD IS = -1A, VGS = 0V
- 1.2 V
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.