PD636BA
NIKO PD636BA (Power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; its Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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TO-252 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-252
Product overview
NIKO PD636BA (Power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; its Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- NIKO
- Part number
- PD636BA
- Category
- Power MOSFETs
- Package
- TO-252
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
11 parametersConstruction
- 类型
- N-Channel Enhancement Mode Field Effect Transistor
- RDS(ON) @ VGS=10V
- 7 mΩ (typ.) / 9 mΩ (max)
- RDS(ON) @ VGS=4.5V
- 10 mΩ (typ.) / 12 mΩ (max)
- Power Dissipation PD (TC=25℃)
- 37.9 W
- Package
- TO-252
Performance
- Drain-Source Voltage VDS
- 30 V
- Gate-Source Voltage VGS
- ±20 V
- Continuous Drain Current ID (TC=25℃)
- 48 A
- Pulsed Drain Current IDM
- 120 A
- Gate Threshold Voltage VGS(th)
- 1.3 V (min) / 1.8 V (typ.) / 2.3 V (max)
- Junction & Storage Temperature Range
- -55 to 150 ℃
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.