OSH10N110BCF
Oriental Semiconductor OSH10N110BCF (IGBT) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; its Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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SOIC-8 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- SOP-8
Product overview
Oriental Semiconductor OSH10N110BCF (IGBT) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; its Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- Oriental
- Part number
- OSH10N110BCF
- Category
- IGBTs
- Package
- SOP-8
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
15 parametersConstruction
- Part Number
- OSH10N110BCF
- Category
- Industry/ commerical
- Package Type
- SOP
- Product Status
- Production
- Polarity
- Dual-N
- Nr of Transistors
- 2
- V DS (max)(V)
- 100
- R DS(on) (@10V)max
- 85
- R DSon (max) @VGS=10V(mΩ)
- 90
- I D (@25℃)max
- 13
- C iss (typ)(pF)
- 951
- Q G (typ@10V)
- 20.2
- V GS(th) min
- 1
- V GS(th) max
- 2.5
- ESD
- N
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.