NCEP026N10T
NCE Power NCEP026N10T (MOSFET - SGT-II (Shielded Gate Trench II)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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TO-220 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-220
Product overview
NCE Power NCEP026N10T (MOSFET - SGT-II (Shielded Gate Trench II)) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- NCE
- Part number
- NCEP026N10T
- Category
- SGT-II MOSFETs
- Package
- TO-220
- Packaging
- Tube
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
28 parametersConstruction
- Maximum Power Dissipation
- 300 W
- Derating factor
- 2 W/℃
- EAS
- 2300 mJ
- Forward Transconductance gFS VDS=5V,ID=115A
- 90 S
- Input Capacitance Clss
- 7500 PF
- Output Capacitance Coss
- 100 PF
- Reverse Transfer Capacitance Crss
- 50 PF
- Turn-on Delay Time td(on)
- 34 nS
- Turn-on Rise Time tr VDD=50V,ID=115A
- 27 nS
- Turn-Off Delay Time td(off) VGS=10V,RG=1.6Ω
- 78 nS
- Turn-Off Fall Time tf
- 30 nS
- Total Gate Charge Qg
- 240 nC
- Gate-Source Charge Qgs
- 75 nC
- Gate-Drain Charge Qgd
- 60 nC
- Reverse Recovery Time trr TJ = 25°C, IF = 115A
- 101 nS
- Reverse Recovery Charge Qrr di/dt = 100A/μs
- 280 nC
Performance
- Drain-Source Voltage
- 100 V
- Gate-Source Voltage
- ±20 V
- Drain Current-Continuous
- 230 A
- Drain Current-Continuous(TC=100℃) ID (100℃)
- 165 A
- Thermal Resistance,Junction-to-Case RθJC
- 0.5 ℃/W
- Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA
- 100 V
- Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V
- 1 μA
- Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V
- ±100 nA
- Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA
- 3.0 V
- Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=115A
- 2.15 mΩ
- Diode Forward Voltage VSD VGS=0V,IS=115A
- 1.2 V
- Diode Forward Current
- 230 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.