NCE65T540K
NCE Power NCE65T540K (MOSFET - Super Junction) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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TO-252 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-252
Product overview
NCE Power NCE65T540K (MOSFET - Super Junction) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- NCE
- Part number
- NCE65T540K
- Category
- Super-Junction MOSFETs
- Package
- TO-252
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
31 parametersConstruction
- Maximum Power Dissipation(Tc=25℃)
- 69 W
- EAR
- 0.3 mJ
- Input Capacitance Clss
- 590 pF
- Output Capacitance Coss
- 37 pF
- Reverse Transfer Capacitance Crss
- 0.9 pF
- Total Gate Charge Qg
- 14.6 nC
- Gate-Source Charge Qgs
- 4 nC
- Gate-Drain Charge Qgd
- 6.7 nC
- Turn-on Delay Time td(on)
- 8 nS
- Turn-on Rise Time tr VDD=380V,ID=4A
- 6 nS
- Turn-Off Delay Time td(off) RG=4.7Ω,VGS=10V
- 59 nS
- Turn-Off Fall Time tf
- 10 nS
- Reverse Recovery Time trr
- 230 nS
- Reverse Recovery Charge Qrr Tj=25°C,IF=4A,di/dt=100A/μs
- 1.2 uC
Performance
- Drain-Source Voltage (VGS=0V）
- 650 V
- Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz)
- ±30 V
- Continuous Drain Current at Tc=25°C ID (DC)
- 8 A
- Continuous Drain Current at Tc=100°C ID (DC)
- 5.2 A
- Operating Junction and Storage Temperature Range TJ,TSTG -55
- +150 °C
- Thermal Resistance，Junction-to-Case（Maximum） RthJC 1.8
- 1 °C/W
- Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 6
- 50 V
- Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=650V,VGS=0V
- 1 μA
- Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V
- ±100 nA
- Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA
- 3 V
- Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4A
- 460 mΩ
- Source-drain current(Body Diode)
- 8 A
- Forward On Voltage VSD Tj=25°C,ISD=8A,VGS=0V
- 0.9 V
- Peak Reverse Recovery Current Irrm
- 10.5 A
- Thermal Resistance，Junction-to-Case（Maximum） RthJC
- 1.81 °C/W
- Thermal Resistance，Junction-to-Ambient （Maximum） RthJA
- 62 °C/W
- Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA
- 650 V
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.