NCE65NF099F
NCE Power NCE65NF099F (MOSFET - Super Junction) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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TO-220 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-220F
Product overview
NCE Power NCE65NF099F (MOSFET - Super Junction) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- NCE
- Part number
- NCE65NF099F
- Category
- Super-Junction MOSFETs
- Package
- TO-220F
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
35 parametersConstruction
- Maximum Power Dissipation(Tc=25℃)
- 35 W
- Single pulse avalanche energy (Note 2)
- 324 mJ
- EAR
- 0.39 mJ
- Reverse diode dv/dt，VDS ≤480 V,ISD<ID dv/dt
- 50 V/ns
- Input Capacitance Clss
- 2800 pF
- Output Capacitance Coss
- 96 pF
- Reverse Transfer Capacitance Crss
- 6 pF
- Total Gate Charge Qg
- 55 nC
- Gate-Source Charge Qgs VDS=480V,ID=18A
- 16.5 nC
- Gate-Drain Charge Qgd VGS=10V
- 25.5 nC
- Turn-on Delay Time td(on)
- 15 nS
- Turn-on Rise Time tr VDD=380V,ID=18A
- 14 nS
- Turn-Off Delay Time td(off) RG=1.7Ω,VGS=10V
- 72 nS
- Turn-Off Fall Time tf
- 14 nS
- Reverse Recovery Time trr
- 160 nS
- Reverse Recovery Charge Qrr Tj=25°C,IF=18A,di/dt=100A/μs
- 0.96 uC
Performance
- Drain-Source Voltage (VGS=0V）
- 650 V
- Gate-Source Voltage (VDS=0V) AC (f>1 Hz)
- ±30 V
- Gate-Source Voltage (VDS=0V) DC
- ±20 V
- Continuous Drain Current at Tc=25°C ID (DC)
- 36 A
- Continuous Drain Current at Tc=100°C ID (DC)
- 25.2 A
- Drain Source voltage slope, VDS ≤480 V, dv/dt
- 50 V/ns
- Operating Junction and Storage Temperature Range TJ,TSTG
- 55...+175 °C
- Thermal Resistance，Junction-to-Case（Maximum） RthJC
- 4.29 °C/W
- Thermal Resistance，Junction-to-Ambient （Maximum） RthJA
- 62 °C/W
- Drain-Source Breakdown Voltage BVDSS VGS=0V ID=1mA
- 650 V
- Zero Gate Voltage Drain Current(Tc=25℃) IDSS VDS=650V,VGS=0V
- 10 μA
- Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V
- ±100 nA
- Gate Threshold Voltage VGS(th) VDS=VGS,ID=500uA
- 3.5 V
- Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=18A
- 85 mΩ
- Gate plateau voltage Vgp
- 7.3 V
- Intrinsic gate resistance RG f = 1 MHz open drain
- 1.5 Ω
- Source-drain current(Body Diode)
- 36 A
- Forward On Voltage VSD Tj=25°C,ISD=36A,VGS=0V
- 1.0 V
- Peak Reverse Recovery Current Irrm
- 12 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.