Electronic component sourcing & distribution since 2004 richard@fastspeed-ic.com ↗
中文 Upload BOM Request quote
NCE / Trench MOSFETs

NCE2312

NCE Power NCE2312 (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

New & Original Prototype to volume sourcing
COMPONENT PROFILE
SOT-23 generic package illustration, not a part-specific image

Isometric preview; switch to top or 3D.

SOT-23 · Generic package illustration

Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓
Package reference · Not a dimension drawing
Package
SOT-23

Product overview

NCE Power NCE2312 (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.

Manufacturer
NCE
Part number
NCE2312
Category
Trench MOSFETs
Package
SOT-23
Packaging
Tape & Reel
Condition
New & Original
Compliance
RoHS Compliant
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

22 parameters

Construction

Maximum Power Dissipation
1.25 W
VGS=2.5V, ID=2.5A
19
VGS=4.5V, ID=2.5A
16
Forward Transconductance gFS VDS=10V,ID=2.5A
10
Input Capacitance Clss
637
Output Capacitance Coss
133
Reverse Transfer Capacitance Crss
124
Turn-on Delay Time td(on)
11
Turn-on Rise Time tr VDD=10V,ID=2.5A
30
Turn-Off Delay Time td(off) VGS=4.5V,RGEN=6Ω
35
Turn-Off Fall Time tf
10
Total Gate Charge Qg
11.1
Gate-Source Charge Qgs VDS=10V,ID=2.5A,VGS=4
1.1
Gate-Drain Charge Qgd
3.4

Performance

Drain-Source Voltage
20 V
Gate-Source Voltage
±12 V
Drain Current-Pulsed (Note 1)
15 A
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA
100 ℃/W
Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA
20 V
Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V
1
Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V
100
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA
0.65

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.