NCE0130KA
NCE Power NCE0130KA (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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TO-252 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-252
Product overview
NCE Power NCE0130KA (MOSFET - Trench) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- NCE
- Part number
- NCE0130KA
- Category
- Trench MOSFETs
- Package
- TO-252
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
27 parametersConstruction
- Maximum Power Dissipation
- 85 W
- Derating factor
- 0.57 W/℃
- Single pulse avalanche energy (Note 5)
- 200 mJ
- VGS=10V, ID=10A
- 25 mΩ
- VGS=4.5V, ID=10A
- 28 mΩ
- gFS Forward Transconductance VDS=5V,ID=10A
- 15 S
- Clss Input Capacitance
- 2479 pF
- Coss Output Capacitance
- 96 pF
- Crss Reverse Transfer Capacitance
- 79 pF
- td(on) Turn-on Delay Time
- 8.4 nS
- tr Turn-on Rise Time VDD=50V,ID=15A
- 6.1 nS
- td(off) Turn-Off Delay Time VGS=12V,RGEN=3Ω
- 60.6 nS
- tf Turn-Off Fall Time
- 8.5 nS
- Qg Total Gate Charge
- 67.2 nC
- Qgs Gate-Source Charge
- 9.4 nC
- Qgd Gate-Drain Charge
- 15.5 nC
- trr Reverse Recovery Time TJ = 25°C, IF = 10A
- 32 nS
Performance
- Drain-Source Voltage
- 100 V
- Gate-Source Voltage
- ±20 V
- Drain Current-Continuous
- 30 A
- Drain Current-Continuous(TC=100℃) ID (100℃)
- 21 A
- Thermal Resistance, Junction-to-Case (Note 2) RθJC
- 1.8 ℃/W
- BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA
- 115 V
- IDSS Zero Gate Voltage Drain Current VDS=100V,VGS=0V
- 1 μA
- IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V
- ±100 nA
- VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA
- 1.9 V
- VSD Diode Forward Voltage (Note 3) VGS=0V,IS=10A
- 1.2 V
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.