COMPONENT PROFILE
MCCMOSFETsMCQD08P06Y-TP
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
MCC MOSFETs MCQD08P06Y-TP is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- MCC
- Part number
- MCQD08P06Y-TP
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
21 parametersConstruction
- VGS=-10V, ID=-4.3A
- 66
- VGS=-4.5V, ID=-3.8A
- 80
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- 15 Q&
- Input Capacitance Ciss
- 505
- Output Capacitance Coss VDS=-15V,VGS=0V,f=1MHz
- 133 pF
- Reverse Transfer Capacitance Crss
- 23
- Total Gate Charge Qg
- 4.27
- Gate-Source Charge Qgs VDD=-30V,VGS=-4.5V,ID=-3.1A
- 2.39 nC
- Gate-Drain Charge Qgd
- 1.1
- Turn-On Delay Time td(on)
- 11
- Turn-On Rise Time tr VDD =-30V, VGS=-4.5V
- 33.8
- Turn-Off Delay Time td(off)
- 12.4
- Turn-Off Fall Time tf
- 23.2
Performance
- Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250µA
- 60 V
- Gate-Source Leakage Current IGSS VDS=0V, VGS =±20V
- ±100 nA
- Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V
- 1 µA
- Gate-Threshold Voltage VGS(th) VDS=VGS, ID=-250µA
- 1.7 V
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.