LSGC15R070WE
Longteng LSGC15R070WE (superjunction MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Package
- TO-220
Product overview
Longteng LSGC15R070WE (superjunction MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- lonten
- Part number
- LSGC15R070WE
- Category
- Super-Junction MOSFETs
- Package
- TO-220
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
36 parametersConstruction
- ( TC = 100°C )
- 71 A
- IDM
- 448 A
- EAS
- 625 mJ
- Power Dissipation
- 192 W
- RθJA
- 62 °C/W
- LSGC15R070WE TO-220 LSGC15R070WE
- 50
- VDS=150 V, VGS=0 V, TJ = 25°C
- 1 μA
- VDS=150V, VGS=0 V, TJ = 150°C
- 10 mA
- Forward transconductance gfs VDS =5V , ID=40A
- 102 S
- Input capacitance Ciss
- 6181
- Output capacitance Coss
- 521 pF
- Reverse transfer capacitance Crss
- 6.79
- Turn-on delay time td(on)
- 63.5
- Rise time tr
- 22.6
- Turn-off delay time td(off)
- 82.3
- Fall time tf
- 31.2
- Gate to source charge Qgs
- 30
- Gate to drain charge Qgd
- 17.6 nC
- Gate charge total Qg
- 85.5
- Output Charge Qoss VDS=50V, VGS= 0V
- 133 nC
- Reverse Recovery Time trr
- 81.3 ns
- Reverse Recovery Charge Qrr IS=50A, di/dt=200A/us, TJ=25℃
- 431 nC
Performance
- Drain-Source Voltage
- 150 V
- Continuous drain current ( TC = 25°C )
- 112 A
- Gate-Source voltage
- ±20 V
- Thermal Resistance, Junction-to-Case RθJC
- 0.65 °C/W
- Drain-source breakdown voltage BVDSS VGS=0 V, ID=250uA
- 150 V
- Gate threshold voltage VGS(th) VDS=VGS, ID=250uA
- 3.0 V
- Gate leakage current, Forward IGSSF VGS=20 V, VDS=0
- 100 nA
- Gate leakage current, Reverse IGSSR VGS=-20V, VDS=0
- 100 nA
- Drain-source on-state resistance RDS(on) TJ = 25°C
- 5.8 mΩ
- Gate resistance Rg VGS=0V, VDS=0V, f=1MHz
- 1.37 Ω
- Gate plateau voltage Vplateau
- 5 V
- Continuous Source Current
- 112 A
- Diode Forward Voltage VSD VGS=0V, IS=1A, TJ=25℃
- 0.6 V
- Peak reverse recovery current Irrm
- 7.87 A
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.