IV1Q12050T3
InventChip IV1Q12050T3 (SiC MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
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TO-220 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- TO-247-3
Product overview
InventChip IV1Q12050T3 (SiC MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- IVCT
- Part number
- IV1Q12050T3
- Category
- SiC MOSFETs
- Package
- TO-247-3
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
11 parametersConstruction
- PTOT Total power dissipation
- 327
Performance
- VDS Drain-Source voltage
- 1200
- VGSmax (DC) Maximum DC voltage
- 5 to 22
- VGSmax (Spike) Maximum spike voltage
- 10 to 25 V
- VGSon Recommended turn-on voltage
- 20±0.5 V
- VGSoff Recommended turn-off voltage
- 3.5 to -2 V
- IDM Drain current (pulsed)
- 145
- Tstg Storage temperature range
- 55 to 175 °C
- TJ Operating junction temperature
- 55 to 175 °C
- TL Solder Temperature
- 260
- Rθ(J-C) Thermal Resistance from Junction to Case
- 0.459
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.