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IVCT / SiC MOSFETs

IV1Q06060T3G

IVCT · SiC MOSFETs

New & Original Prototype to volume sourcing
COMPONENT PROFILE
IVCTSiC MOSFETs
IV1Q06060T3G
Refer to manufacturer for product imagery

Product overview

IVCT SiC MOSFETs IV1Q06060T3G is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.

Manufacturer
IVCT
Part number
IV1Q06060T3G
Category
SiC MOSFETs
Condition
New & Original
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

6 parameters

Construction

PTOT Total power dissipation
227

Performance

VDS Drain-Source voltage
650
VGSmax (DC) Maximum DC voltage
5 to 22
VGSon Recommended turn-on voltage
20±0.5 V
TL Solder Temperature
260
Rθ(J-C) Thermal Resistance from Junction to Case
0.659

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.