IRFB7540PBF
Infineon IRFB7540PBF (HEXFET power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Package
- TO-220
Product overview
Infineon IRFB7540PBF (HEXFET power MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- Infineon
- Part number
- IRFB7540PBF
- Category
- HEXFET Power MOSFETs
- Package
- TO-220
- Packaging
- Tube
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
39 parametersConstruction
- PD @TC = 25°C Maximum Power Dissipation
- 160 W
- Linear Derating Factor
- 1.1 W/°C
- EAS (Thermally limited) Single Pulse Avalanche Energy
- 180
- EAS (Thermally limited) Single Pulse Avalanche Energy
- 313
- RJC Junction-to-Case
- 0.95
- RCS Case-to-Sink, Flat Greased Surface (TO-220)
- 0.50
- RJA Junction-to-Ambient (TO-220)
- 62
- RJA Junction-to-Ambient (PCB Mount) (D2Pak)
- 40
- Gate-to-Source Forward Leakage
- 00 VGS=20V
- Gate-to-Source Reverse Leakage
- 100 VGS=-20V
- gfs Forward Transconductance
- 110
- Qg Total Gate Charge
- 88 ID=65A
- Qgs Gate-to-Source Charge
- 22 VDS=30V
- Qgd Gate-to-Drain Charge
- 28 VGS=10V
- Qsync Total Gate Charge Sync. (Qg – Qgd)
- 60
- td(on) Turn-On Delay Time
- 12 VDD=30V
- tr Rise Time
- 76 ID=65A
- td(off) Turn-Off Delay Time
- 58 RG=2.7
- tf Fall Time
- 56 VGS=10V
- Ciss Input Capacitance
- 4555 VGS=0V
- Coss Output Capacitance
- 415 VDS=25V
- Crss Reverse Transfer Capacitance
- 270
- Coss eff.(ER)
- 430
- Coss eff.(TR) Output Capacitance (Time Related)
- 550
- IS
- 110
- ISM
- 430
- dv/dt Peak Diode Recovery dv/dt
- 11
Performance
- ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
- 110
- ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
- 80 A
- IDM Pulsed Drain Current
- 430
- VGS Gate-to-Source Voltage
- ± 20 V
- Soldering Temperature, for 10 seconds (1.6mm from case)
- 300
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 60
- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
- 48
- RDS(on) Static Drain-to-Source On-Resistance
- 4.2
- VGS(th) Gate Threshold Voltage
- 3.7
- RG Gate Resistance
- 2.2
- VSD Diode Forward Voltage
- 1.2
- IRRM Reverse Recovery Current
- 1.9
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.