01 / 产品信息
产品概述
Infineon IRFB7540PBF（MOSFET(HEXFET功率)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 英飞凌
- 型号
- IRFB7540PBF
- 品类
- MOSFET(HEXFET功率)
- 封装
- TO-220
- 包装
- 管装
- 成色
- 全新原装
- 合规
- 符合 RoHS
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
39 项结构与连接
- PD @TC = 25°C Maximum Power Dissipation
- 160 W
- Linear Derating Factor
- 1.1 W/°C
- EAS (Thermally limited) Single Pulse Avalanche Energy
- 180
- EAS (Thermally limited) Single Pulse Avalanche Energy
- 313
- RJC Junction-to-Case
- 0.95
- RCS Case-to-Sink, Flat Greased Surface (TO-220)
- 0.50
- RJA Junction-to-Ambient (TO-220)
- 62
- RJA Junction-to-Ambient (PCB Mount) (D2Pak)
- 40
- Gate-to-Source Forward Leakage
- 00 VGS=20V
- Gate-to-Source Reverse Leakage
- 100 VGS=-20V
- gfs Forward Transconductance
- 110
- Qg Total Gate Charge
- 88 ID=65A
- Qgs Gate-to-Source Charge
- 22 VDS=30V
- Qgd Gate-to-Drain Charge
- 28 VGS=10V
- Qsync Total Gate Charge Sync. (Qg – Qgd)
- 60
- td(on) Turn-On Delay Time
- 12 VDD=30V
- tr Rise Time
- 76 ID=65A
- td(off) Turn-Off Delay Time
- 58 RG=2.7
- tf Fall Time
- 56 VGS=10V
- Ciss Input Capacitance
- 4555 VGS=0V
- Coss Output Capacitance
- 415 VDS=25V
- Crss Reverse Transfer Capacitance
- 270
- Coss eff.(ER)
- 430
- Coss eff.(TR) Output Capacitance (Time Related)
- 550
- IS
- 110
- ISM
- 430
- dv/dt Peak Diode Recovery dv/dt
- 11
性能与环境
- ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
- 110
- ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
- 80 A
- IDM Pulsed Drain Current
- 430
- VGS Gate-to-Source Voltage
- ± 20 V
- Soldering Temperature, for 10 seconds (1.6mm from case)
- 300
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 60
- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
- 48
- RDS(on) Static Drain-to-Source On-Resistance
- 4.2
- VGS(th) Gate Threshold Voltage
- 3.7
- RG Gate Resistance
- 2.2
- VSD Diode Forward Voltage
- 1.2
- IRRM Reverse Recovery Current
- 1.9
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。