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Diodes / Uncategorized

DMP10H4D2S

Diodes Incorporated DMP10H4D2S (DMP10H4D2S) is widely used for general circuit functions in consumer electronics, industrial control and communications equipment. Genuine parts; operating voltage, power consumption and package per the official datasheet. Contact us for pricing and stock.

New & Original Prototype to volume sourcing
COMPONENT PROFILE
SOT-23 generic package illustration, not a part-specific image

Isometric preview; switch to top or 3D.

SOT-23 · Generic package illustration

Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓
Package reference · Not a dimension drawing
Package
SOT-23

Product overview

Diodes Incorporated DMP10H4D2S (DMP10H4D2S) is widely used for general circuit functions in consumer electronics, industrial control and communications equipment. Genuine parts; operating voltage, power consumption and package per the official datasheet. Contact us for pricing and stock.

Manufacturer
Diodes
Part number
DMP10H4D2S
Category
Uncategorized
Package
SOT-23
Packaging
Tape & Reel
Condition
New & Original
Compliance
RoHS Compliant
Lifecycle
Confirm with manufacturer
Lead time / MOQ
Confirm with quotation

Technical parameters

25 parameters

Construction

State TA = +70°C
0.21
Gate-Body Leakage
±10
Input Capacitance Ciss
87
Output Capacitance Coss
5.6 pF
Reverse Transfer Capacitance Crss
2.9
Total Gate Charge Qg
1.8
Gate-Source Charge Qgs
0.3 nC
Gate-Drain Charge Qgd
0.5
Turn-On Delay Time tD(ON)
3.3
Turn-On Rise Time tR
2.6
Turn-Off Delay Time tD(OFF)
8.4
Turn-Off Fall Time tF
4.9
Reverse Recovery Time tRR
17.8
Reverse Recovery Charge
24.8

Performance

Drain-Source Voltage
100 V
Gate-Source Voltage
±20 V
Maximum Body Diode Continuous Current (Note 6)
0.27 A
Thermal Resistance, Junction to Ambient Steady (Note 5) RθJA
333
Thermal Resistance, Junction to Ambient State (Note 6) RθJA
282 C/W
Thermal Resistance, Junction to Case (Note 6) RθJC
115
Drain-Source Breakdown Voltage
100
Zero Gate Voltage Drain Current
1
Gate Threshold Voltage VGS(TH)
2.3
Diode Forward Voltage
0.82
Gate Resistance
15.3

Specifications & documentation

Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.

Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.