COMPONENT PROFILE
DiodesMOSFETsDMN6140L-13
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
Diodes MOSFETs DMN6140L-13 is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- Diodes
- Part number
- DMN6140L-13
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
25 parametersConstruction
- State TA = +70°C
- 1.2
- t<10s
- 115
- Gate-Source Leakage
- ±100
- Forward Transfer Admittance |Yfs|
- 2.2
- Input Capacitance Ciss
- 315
- Output Capacitance Coss
- 18 pF
- Reverse Transfer Capacitance Crss
- 16
- Gate Resistnace Rg
- 0.65
- Total Gate Charge (VGS = 10V) Qg
- 8.6
- Total Gate Charge (VGS = 5V) Qg
- 4.1
- Gate-Source Charge Qgs
- 1.0
- Gate-Drain Charge Qgd
- 1.7
- Turn-On Delay Time tD(on)
- 2.6
- Turn-On Rise Time tr
- 3.6
- Turn-Off Delay Time tD(off)
- 16.3
- Turn-Off Fall Time tf
- 2.7
- Reverse Recovery Time trr
- 16.8 ns
- Reverse Recovery Charge Qrr
- 9.0 nC
Performance
- Drain-Source Voltage
- 60 V
- Maximum Continuous Body Diode Forward Current (Note 6)
- 1.5 A
- Thermal Resistance, Junction to Case RJC
- 39
- Drain-Source Breakdown Voltage
- 60
- Zero Gate Voltage Drain Current
- 1
- Gate Threshold Voltage VGS(th)
- 3
- Diode Forward Voltage
- 0.75
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.