CJ3439KDW
Changjiang (CJ) CJ3439KDW (MOSFET) — genuine original power discrete device. Voltage rating, current and thermal-resistance parameters are specified in the official Datasheet. Inquiries and samples are welcome.
Isometric preview; switch to top or 3D.
SOT-363 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- SOT-363
Product overview
Changjiang (CJ) CJ3439KDW (MOSFET) — genuine original power discrete device. Voltage rating, current and thermal-resistance parameters are specified in the official Datasheet. Inquiries and samples are welcome.
- Manufacturer
- CHANGJING
- Part number
- CJ3439KDW
- Category
- MOSFETs
- Package
- SOT-363
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
12 parametersConstruction
- Type
- N-channel + P-channel MOSFET (CJ3134K + CJ3139K)
- RDS(on) max
- 380 mΩ @ VGS = 4.5 V (N) / 520 mΩ @ VGS = -4.5 V (P)
- RDS(on) @ VGS = 2.5 V
- 450 mΩ (N) / 700 mΩ (P)
- RDS(on) @ VGS = 1.8 V
- 800 mΩ (N) / 950 mΩ (P, typ)
- Package
- SOT-363
Performance
- Drain-Source Voltage VDS
- 20 V (N) / -20 V (P)
- Gate-Source Voltage VGS
- ±12 V
- Continuous Drain Current ID
- 0.75 A (N) / -0.66 A (P)
- Pulsed Drain Current IDM
- 1.8 A (N) / -1.2 A (P)
- Gate Threshold Voltage VGS(th)
- 0.35 V - 1.1 V (N) / -0.35 V to -1.1 V (P)
- Thermal Resistance RθJA
- 833 °C/W
- Junction Temperature TJ
- 150 °C
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.