BSZ520N15NS3GATMA1
Infineon BSZ520N15NS3GATMA1 (OptiMOS low-voltage MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Package
- SOT-23
Product overview
Infineon BSZ520N15NS3GATMA1 (OptiMOS low-voltage MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- Infineon
- Part number
- BSZ520N15NS3GATMA1
- Category
- OptiMOS Low-Voltage MOSFETs
- Package
- SOT-23
- Packaging
- Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
13 parametersConstruction
- Polarity
- N-channel
- RDS(on)
- 52 mΩ (max) / 42 mΩ (typ) @ VGS = 10 V
- Total Gate Charge Qg
- 8.7 nC (typ) / 12 nC (max) @ 10 V
- Power Dissipation Ptot
- 57 W
- Input Capacitance Ciss
- 670 pF
- Output Capacitance Coss
- 80 pF
- Package
- PQFN 3.3 x 3.3 (PG-TSDSON-8)
Performance
- Drain-Source Voltage VDS
- 150 V
- Continuous Drain Current ID (@25°C)
- 21 A
- Pulsed Drain Current IDpuls
- 84 A
- Gate Threshold Voltage VGS(th)
- 3 V (2 V - 4 V)
- Thermal Resistance Rth
- 2.2 K/W
- Operating Temperature
- -55 °C to +150 °C
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.