BSS84PWH6327XTSA1
Infineon BSS84PWH6327XTSA1 (small-signal MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Package
- SOT-323
Product overview
Infineon BSS84PWH6327XTSA1 (small-signal MOSFET) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- Infineon
- Part number
- BSS84PWH6327XTSA1
- Category
- Small-Signal MOSFETs
- Package
- SOT-323
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
30 parametersConstruction
- Avalanche energy, single pulse
- 2.61 mJ
- Avalanche energy, periodic limited by Tjmax
- 0.03
- Reverse diode dv/dt dv/dt
- 6 kV/µs
- Power dissipation Ptot
- 0.3 W
- Rev 2.0 Page 1
- 2016-06- 21
- VDS = -60 V, V GS = 0 V, T j = 25 °C
- 0.1
- VDS = -60 V, V GS = 0 V, T j = 125 °C
- 10
- Rev 2.0 Page 2
- 2016-0 6-21
- Transconductance g fs V DS£2*ID*R DS(on)max , 0.08
- 0.16 S
- Input capacitance Ciss V GS=0V, VDS=-25V
- 15.3 pF
- Output capacitance Coss f=1MHz
- 5.8
- Reverse transfer capacitance Crss
- 3
- Turn-on delay time t d(on) V DD=-30V, V GS=-4.5V
- 6.7 ns
- Rise time tr ID=-0.12A, RG=25W
- 16.2
- Turn-off delay time t d(off)
- 8.6
- Fall time tf
- 20.5
- Gate to source charge Q gs V DD=-48V, I D=-0.15A
- 0.25 nC
- Gate to drain charge Q gd
- 0.3
- Gate charge total Qg V DD=-48V, I D=-0.15A
- 1
- Reverse recovery time t rr V R=-30V, I F=l S
- 23.6 ns
- Reverse recovery charge Q rr diF/dt=100A/µs
- 11.6 nC
- Rev 2.0 Page 3
- 2016-06- 21
Performance
- Continuous drain current
- 0.15 A
- Gate source voltage
- ±20 V
- Operating and storage temperature Tj , Tstg -5
- 5...+150 °C
- Gate threshold voltage, VGS = VDS VGS(th) -1
- 1.5
- Gate-source leakage current IGSS
- 10 nA
- Drain-source on-state resistance RDS(on)
- 10.5 W
- Gate plateau voltage V(plateau) V DD=-48V, ID=-0.15A
- 3.4 V
- Inverse diode forward voltage VSD V GS=0V, IF=-0.15A
- 0.84
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.