BFP650H6327XTSA1
Infineon BFP650H6327XTSA1 (RF transistor) targets high-frequency applications such as RF front-ends, wireless connectivity and microwave communication. Genuine original stock; frequency range, gain and noise figure are per the official Datasheet. Contact us for pricing, samples and available stock.
- Package
- SOT-343
Product overview
Infineon BFP650H6327XTSA1 (RF transistor) targets high-frequency applications such as RF front-ends, wireless connectivity and microwave communication. Genuine original stock; frequency range, gain and noise figure are per the official Datasheet. Contact us for pricing, samples and available stock.
- Manufacturer
- Infineon
- Part number
- BFP650H6327XTSA1
- Category
- RF Transistors
- Package
- SOT-343
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
12 parametersConstruction
- Datasheet
- 3
- Junction - soldering point RthJS
- 140 K/W
- Transition frequency fT 31
- 42
- Collector base capacitance CCB
- 0.26
- Collector emitter capacitance
- 0.45
- Emitter base capacitance
- 1.3
Performance
- Collector emitter voltage VCEO
- 4.0
- Collector emitter breakdown voltage V(BR)CEO 4
- 4.5
- Collector emitter leakage current ICES
- 0.1
- Collector base leakage current
- 1
- Emitter base leakage current
- 10
- DC current gain hFE 100
- 170
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.