BCX70H
Nexperia BCX70H (Bipolar Transistor BJT) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; its Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
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SOT-23 · Generic package illustration
Based on the catalogue package field; not verified for this part. Check manufacturer documentation for dimensions, polarity and pinout.View part documentation ↓- Package
- SOT-23
Product overview
Nexperia BCX70H (Bipolar Transistor BJT) is designed for high-voltage, high-current applications such as motor drives, power conversion and power amplification. Genuine original stock; its Rds(on), Vceo and package thermal performance are per the official Datasheet. Contact us for volume pricing and available stock.
- Manufacturer
- Nexperia
- Part number
- BCX70H
- Category
- Bipolar Transistors (BJT)
- Package
- SOT-23
- Packaging
- Tape & Reel
- Condition
- New & Original
- Compliance
- RoHS Compliant
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
25 parametersConstruction
- VCEO collector-emitter open base
- 45 V
- Ptot total power dissipation Tamb ≤ 25 °C [1]
- 250 mW
- IEBO emitter-base cut-off VEB = 4 V; IC = 0 µA; Tamb = 25 °C
- 20 nA
- VCE = 5 V; IC = 2 mA; Tamb = 25 °C
- 310
- VCE = 1 V; IC = 50 mA; pulsed; tp ≤
- 70
- VCE = 5 V; IC = 2 mA; Tamb = 25 °C [1]
- 650 mV
- Ce emitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A;
- 11 pF
- fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz;
- 250 MHz
- NF noise figure VCE = 5 V; IC = 200 µA; RS = 2 kΩ;
- 2 dB
Performance
- IC collector current
- 100 mA
- hFE DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 °C
- 310
- VCBO collector-base voltage open emitter
- 45 V
- VCEO collector-emitter voltage open base
- 45 V
- VEBO emitter-base voltage open collector
- 5 V
- ICM peak collector current single pulse; tp ≤ 1 ms
- 200 mA
- IBM peak base current
- 200 mA
- Tj junction temperature
- 150 °C
- Tamb ambient temperature
- 150 °C
- Tstg storage temperature
- 150 °C
- Rth(j-a) thermal resistance from [1]
- 500 K/W
- current VCB = 45 V; IE = 0 A; Tamb = 150 °C
- 20 µA
- hFE DC current gain VCE = 5 V; IC = 10 µA; Tamb = 25 °C
- 40
- saturation voltage IC = 50 mA; IB = 1.25 mA; pulsed; tp ≤
- 550 mV
- voltage IC = 50 mA; IB = 1.25 mA; pulsed; tp ≤
- 1050 mV
- VBE base-emitter voltage VCE = 5 V; IC = 10 µA; Tamb = 25 °C
- 520 mV
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.