COMPONENT PROFILE
AOSMOSFETsAOT8N80
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
AOS MOSFETs AOT8N80 is a genuine original component suitable for circuit design and volume procurement. We supply full specifications, datasheets and flexible pricing, supporting both prototype and long-term supply.
- Manufacturer
- AOS
- Part number
- AOT8N80
- Category
- MOSFETs
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
24 parametersConstruction
- ID=250µA, VGS=0V, TJ=25°C
- 800
- ID=250µA, VGS=0V, TJ=150°C
- 900 V
- VDS=800V, VGS=0V
- 1
- VDS=640V, TJ=125°C
- 10
- gFS Forward Transconductance VDS=40V, ID=4A
- 9 S
- Ciss Input Capacitance 1
- 375 pF
- Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz
- 101 pF
- Crss Reverse Transfer Capacitance
- 11 pF
- Qg Total Gate Charge
- 26 nC
- Qgs Gate Source Charge VGS=10V, VDS=640V, ID=8A
- 7.3 nC
- Qgd Gate Drain Charge
- 9.1 nC
- tD(on) Turn-On DelayTime
- 35 ns
- tr Turn-On Rise Time VGS=10V, VDS=400V, ID=8A
- 51 ns
- tD(off) Turn-Off DelayTime RG=25Ω
- 69 ns
- tf Turn-Off Fall Time
- 41 ns
- 10V
- =40V
Performance
- Zero Gate Voltage Drain Current ID=250µA, VGS=0V
- 0 V/oC
- IGSS Gate-Body leakage current VDS=0V, VGS=±30V
- 100 nΑ
- VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA
- 3.9 V
- RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4A
- 1.63 Ω
- VSD Diode Forward Voltage IS=1A,VGS=0V
- 1 V
- IS Maximum Body-Diode Continuous Current
- 7.4 A
- ISM Maximum Body-Diode Pulsed Current
- 26 A
- Rg Gate resistance VGS=0V, VDS=0V, f=1MHz
- 3.5 Ω
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.