AO3415A
Alpha & Omega Semiconductor (AOS) AO3415A (power MOSFET (P-channel)) is designed for motor drive, power conversion and power amplification requiring high voltage and high current. Genuine stock; Rds(on), Vceo and package thermal performance per the official datasheet. Contact us for volume pricing and stock.
- Package
- SOT-23
Product overview
Alpha & Omega Semiconductor (AOS) AO3415A (power MOSFET (P-channel)) is designed for motor drive, power conversion and power amplification requiring high voltage and high current. Genuine stock; Rds(on), Vceo and package thermal performance per the official datasheet. Contact us for volume pricing and stock.
- Manufacturer
- AOS
- Part number
- AO3415A
- Category
- Power MOSFETs (P-Channel)
- Package
- SOT-23
- Packaging
- Reel
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
Technical parameters
34 parametersConstruction
- Continuous Drain TA=25°C
- 5
- Power Dissipation TA=70°C
- 1
- Maximum Junction-to-Ambient A t ≤ 10s
- 65 °C/W
- Maximum Junction-to-Ambient A D Steady-State
- 85 °C/W
- Maximum Junction-to-Lead Steady-State RqJL
- 43 °C/W
- VDS=-20V, VGS=0V
- 1
- VGS=-4.5V, ID=-4A
- 34
- VGS=-1.8V, ID=-2A
- 52 mW
- VGS=-1.5V, ID=-1A
- 61 mW
- gFS Forward Transconductance VDS=-5V, ID=-4A
- 20 S
- Ciss Input Capacitance
- 751 pF
- Coss Output Capacitance VGS=0V, VDS=-10V, f=1MHz
- 115 pF
- Crss Reverse Transfer Capacitance
- 80 pF
- Qg Total Gate Charge
- 9.3 nC
- Qgs Gate Source Charge VGS=-4.5V, VDS=-10V, ID=-4A
- 1 nC
- Qgd Gate Drain Charge
- 2.2 nC
- tD(on) Turn-On DelayTime
- 13 ns
- tr Turn-On Rise Time VGS=-4.5V, VDS=-10V, RL=2.5W
- 9 ns
- tD(off) Turn-Off DelayTime RGEN=3W
- 19 ns
- tf Turn-Off Fall Time
- 29 ns
- trr Body Diode Reverse Recovery Time IF=-4A, dI/dt=500A/ms
- 26 ns
- Qrr Body Diode Reverse Recovery Charge IF=-4A, dI/dt=500A/ms
- 51 nC
Performance
- Drain-Source Voltage
- 20 V
- Gate-Source Voltage
- ±8 V
- Current TA=70°C
- 4 A
- Junction and Storage Temperature Range TJ
- 55 to 150 °C
- BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V
- 20 V
- IGSS Gate-Body leakage current VDS=0V, VGS= ±8V
- ±10 mA
- VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA
- 0.57 V
- ID(ON) On state drain current VGS=-4.5V, VDS=-5V
- 30 A
- RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-4A
- 42 mW
- VSD Diode Forward Voltage IS=-1A,VGS=0V
- 0.64 V
- IS Maximum Body-Diode Continuous Current
- 2 A
- Rg Gate resistance VGS=0V, VDS=0V, f=1MHz
- 13 W
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.