BEILING / Memory (EEPROM/Flash)
BL24C02F-PARC
BEILING BL24C02F-PARC Memory (EEPROM/Flash)
COMPONENT PROFILE
BEILINGMemory (EEPROM/Flash)BL24C02F-PARC
Refer to manufacturer for product imagery
01 / PRODUCT INFORMATION
Product overview
贝岭 BL24C02F-PARC Memory (EEPROM/Flash)
- Manufacturer
- BEILING
- Part number
- BL24C02F-PARC
- Category
- Memory (EEPROM/Flash)
- Condition
- New & Original
- Lifecycle
- Confirm with manufacturer
- Lead time / MOQ
- Confirm with quotation
02 / TECHNICAL DETAILS
Technical parameters
28 parametersConstruction
- Input Low Level
- 0.3
- Output Low Level VCC=1.7V
- 0.2
- Output Low Level VCC=5.0V
- 0.4
- Input/Output Capacitance(SDA)
- 8 pFVIO=0V
- Input Capacitance(A0,A1,A2,SCL)
- 6 pFVIN=0V
- Clock Frequency, SCL fSCL
- 1000 kHz
- Clock Pulse Width Low tLOW
- 0.5 μs
- Clock Pulse Width High tHIGH
- 0.26 μs
- Noise Suppression Time tI
- 50 ns
- Clock Low to Data Out Valid tAA
- 0.45 μs
- tBUF
- 0.5 μs
- Start Hold Time tHD:STA
- 0.26 μs
- Start Setup Time tSU:STA
- 0.26 μs
- Data In Hold Time tHD:DAT
- 0 μs
- Data In Setup Time tSU:DAT
- 50 ns
- Stop Setup Time tSU:STO
- 0.26 μs
- Data Out Hold Time tDH
- 50 ns
- Write Cycle Time tWR
- 3 ms
- 5.0V,25℃,Byte Mode(1) Endurance
- 1M
- 20 ns and le
- 300 n
- Input rise a
- 50 ns
- BL24C02F 2K
- 6×8)
- BL24C02F 2K bits (
- 256×8)
Performance
- Supply Voltage
- 5.5 V@400kHz
- Supply Current VCC=5.0V
- 0.14
- Input Leakage Current
- 0.10
- Output Leakage Current
- 0.05
- Applicable over recommended operating range from
- +2.5V
03 / RESOURCES
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.