01 / 产品信息
产品概述
Wayon（维安） WMS15P02T1（MOSFET(P沟道)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 维安
- 型号
- WMS15P02T1
- 品类
- MOSFET(P沟道)
- 封装
- SOP-8
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
32 项结构与连接
- Single Pulse Avalanche Energy1
- 61.25 mJ
- Total Power Dissipation TA=25°C
- 3.1 W
- ID=
- 15A
- RG =
- 3Ω, ID= -15A
- IF =
- 15A, dI/dt = 100A/µs
- VGS = -4.5V, ID = -15A
- 6
- VGS = -1.8V, ID = -8A
- 10.2
- Forward Transconductance4 gfs VDS = -5V, ID = -15A
- 78 S
- Input Capacitance Ciss
- 3510
- Output Capacitance Coss
- 520 pF
- Reverse Transfer Capacitance Crss
- 450
- Total Gate Charge Qg
- 43
- Gate-Source Charge Qgs
- 7.9 nC
- Gate-Drain Charge Qgd
- 11.2
- Turn-on Delay Time td(on)
- 14.5
- Rise Time tr VGS = -4.5V, VDD = -10V
- 20.2
- Turn-off Delay Time td(off)
- 93
- Fall Time tf
- 161
- Body Diode Reverse Recovery Time trr
- 28 ns
- Body Diode Reverse Recovery Charge Qrr
- 25.7 nC
性能与环境
- Drain-Source Voltage
- 20 V
- Gate-Source Voltage
- ±10 V
- Operating Junction and Storage Temperature Range TJ, TSTG
- 55 to 150 °C
- Thermal Resistance from Junction-to-Ambient3 RθJA
- 40 °C/W
- Gate-body Leakage current lGSS VDS = 0V, VGS = ±10V
- ±100 nA
- Zero Gate Voltage Drain TJ=25°C
- 1
- Current TJ=100°C
- 100
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = -250µA
- 0.65 V
- Drain-Source On-Resistance4 RDS(on) VGS = -2.5V, ID = -10A
- 7.5 mΩ
- Gate resistance Rg f =1MHz
- 11 Ω
- Diode Forward Voltage4 VSD IS = -1A, VGS = 0V
- 1.2 V
- Continuous Source Current TA=25°C IS
- 15 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。