01 / 产品信息
产品概述
Wayon（维安） WMO80N06TS（MOSFET(沟槽N沟道)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 维安
- 型号
- WMO80N06TS
- 品类
- MOSFET(沟槽N沟道)
- 封装
- TO-252
- 包装
- 卷带
- 成色
- 全新原装
- 合规
- 符合 RoHS
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
33 项结构与连接
- Single Pulse Avalanche Energy2
- 105.8 mJ
- Total Power Dissipation TC=25°C
- 92 W
- VGS = 10V, VDS = 3
- 0V
- Rise Time tr VGS = 10V, VDD = 3
- 0V, 9.6
- IF = 20A, dI/dt =
- 100A/µs
- Forward Transconductance4 gfs VDS = 10V , ID =20A
- 47 S
- Input Capacitance Ciss
- 4160
- Output Capacitance Coss
- 235 pF
- Reverse Transfer Capacitance Crss
- 175
- Total Gate Charge Qg
- 67
- Gate-Source Charge Qgs
- 17.7 nC
- Gate-Drain Charge Qgd
- 18
- Turn-on Delay Time td(on)
- 18.4
- Rise Time tr VGS = 10V, VDD = 30V
- 9.6
- Turn-off Delay Time td(off)
- 36
- Fall Time tf
- 11
- Body Diode Reverse Recovery Time trr
- 31 ns
- Body Diode Reverse Recovery Charge Qrr
- 43 nC
性能与环境
- Drain-Source Voltage
- 60 V
- Gate-Source Voltage
- ±20 V
- Thermal Resistance from Junction-to- Ambient3 RθJA
- 55 °C/W
- Thermal Resistance from Junction-to-Case RθJC
- 1.36 °C/W
- Gate-body Leakage current lGSS VDS = 0V, VGS = ±2
- 0V -±100nA
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 25
- 0µA 2.94V
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA
- 60 V
- Gate-body Leakage current lGSS VDS = 0V, VGS = ±20V
- ±100 nA
- Zero Gate Voltage Drain TJ=25°C
- 1
- Current TJ=100°C
- 100
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250µA
- 2.9 V
- Drain-Source on-Resistance4 RDS(on) VGS = 10V, ID = 20A
- 6.5 mΩ
- Gate Resistance Rg f = 1MHz
- 1 Ω
- Diode Forward Voltage4 VSD IS = 20A, VGS = 0V
- 1.2 V
- Continuous Source Current TC=25°C IS
- 80 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。