01 / 产品信息
产品概述
Wayon（维安） WMO80N03T1（MOSFET(沟槽N沟道)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 维安
- 型号
- WMO80N03T1
- 品类
- MOSFET(沟槽N沟道)
- 封装
- TO-252
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
35 项结构与连接
- Single Pulse Avalanche Energy2
- 96.8 mJ
- Total Power Dissipation TC=25°C
- 59.5 W
- VGS = 10V
- = 30A 4.15
- Forward Transconductance4 gfs VDS=10V , ID=
- 30A 80-S
- Rise Time tr VGS =10V
- =15V, 16
- RG = 3Ω, ID=
- 30A
- VGS = 10V, ID = 30A
- 4.1
- VGS = 4.5V, ID = 15A
- 5.2
- Forward Transconductance4 gfs VDS=10V , ID=30A
- 80 S
- Input Capacitance Ciss
- 2288
- Output Capacitance Coss
- 277 pF
- Reverse Transfer Capacitance Crss
- 209
- Total Gate Charge Qg
- 20
- Gate-Source Charge Qgs
- 5 nC
- Gate-Drain Charge Qgd
- 7.2
- Turn-On Delay Time td(on)
- 9
- Rise Time tr VGS =10V, VDD =15V
- 16
- Turn-Off Delay Time td(off)
- 43
- Fall Time tf
- 12
- Body Diode Reverse Recovery Time trr
- 17 ns
- Body Diode Reverse Recovery Charge Qrr
- 9 nC
性能与环境
- Drain-Source voltage
- 30 V
- Gate-Source voltage
- ±20 V
- Operating Junction and Storage Temperature Range TJ, TSTG
- 55 to 150 °C
- Thermal Resistance from Junction-to-Ambient3 RθJA
- 62 °C/W
- Thermal Resistance from Junction-to-Case RθJC
- 2.1 °C/W
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V
- = 250µA --V
- Gate-Threshold Voltage VGS(th) VDS = VGS
- = 250µA 1.62.2V
- Diode Forward Voltage4 VSD IS = 1A
- = 0V -1.2V
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA
- 30 V
- Gate-body Leakage current lGSS VDS = 0V, VGS = ±20V
- ±100 nA
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250µA
- 1.6 V
- Gate Resistance Rg f =1MHz
- 2 Ω
- Diode Forward Voltage4 VSD IS = 1A, VGS = 0V
- 1.2 V
- Continuous Source Current TC=25°C IS
- 80 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。