01 / 产品信息
产品概述
Wayon（维安） WMO120N04TS（MOSFET(沟槽N沟道)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 维安
- 型号
- WMO120N04TS
- 品类
- MOSFET(沟槽N沟道)
- 封装
- TO-252
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
29 项结构与连接
- Single Pulse Avalanche Energy2
- 140.45 mJ
- Total Power Dissipation TC=25°C
- 96 W
- RG = 3Ω
- = 20A
- VGS = 10V, ID = 20A
- 3
- VGS = 4.5V, ID = 15A
- 3.8
- Forward Transconductance4 gfs VDS = 10V, ID = 20A
- 100 S
- Input Capacitance Ciss
- 5210
- Output Capacitance Coss
- 430 pF
- Reverse Transfer Capacitance Crss
- 325
- Total Gate Charge Qg
- 95
- Gate-Source Charge Qgs
- 9.5 nC
- Gate-Drain Charge Qgd
- 18.5
- Turn-On Delay Time td(on)
- 15.8
- Rise Time tr VGS =10V, VDD =20V
- 30.5
- Turn-Off Delay Time td(off)
- 150
- Fall Time tf
- 82
- Body Diode Reverse Recovery Time trr
- 32 ns
- Body Diode Reverse Recovery Charge Qrr
- 19.2 nC
性能与环境
- Drain-Source Voltage
- 40 V
- Gate-Source Voltage
- ±20 V
- Operating Junction and Storage Temperature Range TJ, TSTG -5
- 5 to 150 °C
- Thermal Resistance from Junction-to-Ambient3 RθJA
- 56 °C/W
- Thermal Resistance from Junction-to-Case RθJC
- 1.3 °C/W
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA
- 40 V
- Gate-body Leakage current lGSS VDS = 0V, VGS = ±20V
- ±100 nA
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250µA
- 1.6 V
- Gate Resistance RG f =1MHz
- 1 Ω
- Diode Forward Voltage4 VSD IS = 20A, VGS = 0V
- 1.2 V
- Continuous Source Current TC=25°C IS
- 120 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。