01 / 产品信息
产品概述
Wayon（维安） WMB680N15HG4（MOSFET(SGT N沟道)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 维安
- 型号
- WMB680N15HG4
- 品类
- MOSFET(SGT N沟道)
- 封装
- PDFN5060-8L
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
30 项结构与连接
- Single Pulse Avalanche Energy2
- 14.5 mJ
- Total Power Dissipation TC=25°C
- 62.5 W
- VDS = 7
- 5V, VGS =0V
- VGS = 1
- 0V, VDS = 75V
- Forward Transconductance4 gfs VDS = 10V, ID = 10A
- 27 S
- Input Capacitance Ciss
- 545
- Output Capacitance Coss
- 46 pF
- Reverse Transfer Capacitance Crss
- 2.5
- Total Gate Charge Qg
- 7.7
- Gate-Source Charge Qgs
- 2.4 nC
- Gate-Drain Charge Qgd
- 1.6
- Turn-On Delay Time td(on)
- 7.2
- Rise Time tr VGS =10V, VDD = 75V
- 2.2
- Turn-Off Delay Time td(off)
- 11
- Fall Time tf
- 2.9
- Body Diode Reverse Recovery Time trr
- 50 ns
- Body Diode Reverse Recovery Charge Qrr
- 72.5 nC
- Rev.1.0, 2024 www.way-on.com
- 8/8
性能与环境
- Drain-Source Voltage
- 150 V
- Gate-Source Voltage
- ±20 V
- Operating Junction and Storage Temperature Range TJ , TSTG
- 55 to 150 °C
- Thermal Resistance from Junction-to-Ambient3 RθJA
- 50 C/W
- Thermal Resistance from Junction-to-Case RθJC
- 2 C/W
- Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA
- 150 V
- Gate-body Leakage Current lGSS VDS = 0V, VGS = ±20V
- ±100 nA
- Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250µA
- 3 V
- Drain-Source On-Resistance4 RDS(on) VGS = 10V, ID = 10A
- 52 mΩ
- Gate Resistance Rg f = 1MHz
- 2.1 Ω
- Diode Forward Voltage4 VSD IS = 10A, VGS = 0V
- 1.2 V
- Continuous Source Current TC=25°C IS
- 20 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。