01 / 产品信息
产品概述
VISHAY 传感器 TCND5000 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- VISHAY
- 型号
- TCND5000
- 品类
- 传感器
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
30 项结构与连接
- Power dissipation
- 190 mW
- Rev. 1.6, 12-Jun-14 1 Document Number
- 83795
- Junction capacitance VR = 0 V, f = 1 MHz, E = 0 lx Cj
- 40 pF
- Radiant intensity IF = 20 mA, tp = 20 ms Ie
- 11 mW/sr
- Angle of half intensity
- ± 12 deg
- Peak wavelength IF = 100 mA P
- 940 nm
- Spectral bandwidth IF = 100 mA
- 30 nm
- Rise time IF = 100 mA tr
- 15 ns
- Fall time IF = 100 mA tf
- 15 ns
- Rev. 1.6, 12-Jun-14 2 Document Number: 8379
- 5
- Diode capacitance VR = 5 V, f = 1 MHz, E = 0 lx
- 1.8 pF
- Wavelength of peak sensitivity P
- 930 nm
- Range of spectral bandwidth 0.5
- 840 t nm
性能与环境
- Reverse voltage
- 5 V
- Forward current
- 100 mA
- Peak forward current tp = 50 μs, t = 2 ms, Tamb 25 °C
- 500 mA
- Junction temperature Tj
- 100 °C
- Ambient temperature range Tamb -4
- 0 to +85 °C
- Storage temperature range Tstg -4
- 0 to +100 °C
- Soldering temperature acc. fig. 14 Tsd
- 260 °C
- Forward voltage IF = 50 mA, tp = 20 ms
- 1.2 V
- Temperature coefficient of VF IF = 1 mA
- 1.3 mV/K
- Reverse current VR = 5 V
- 10 μA
- Temperature coefficient of p IF = 100 mA TKP
- 0.2 nm/K
- Forward voltage IF = 50 mA
- 1 V
- Breakdown voltage IR = 100 μA
- 60 V
- Reverse dark current VR = 10 V, E = 0 lx Iro
- 1 nA
- Reverse light current Ee = 1 mW/cm2, = 950 nm, V R=5V Ira
- 12 μA
- Temperature coefficient of Ira = 870 nm, VR = 5 V TKira
- 0.2 %/K
- Reverse Light Current Ira
- 260 nA
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。