01 / 产品信息
产品概述
STM MOSFET STW26NM60N 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- STM
- 型号
- STW26NM60N
- 品类
- MOSFET
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
34 项结构与连接
- PTOT Total power dissipation at TC = 25 °C
- 140 W
- RDS(on) VGS = 10 V, ID = 10 A
- 135 mΩ
- V(BR)DSS ID = 1 mA, VGS = 0
- 600 V
- VGS = 0 V, VDS = 600
- 1 µA
- IGSS VDS = 0 V, VGS = ±25
- ±100 nA
- RDS(on) VGS = 10 V, ID = 10
- 135 mΩ
- Ciss Input capacitance
- 1800 pF
- Coss Output capacitance
- 115 pF
- Crss
- 6 pF
- Coss eq.(1) VDS = 0 to 480 V, VGS = 0
- 310 pF
- Qg Total gate charge
- 60 nC
- Gate-drain charge
- 30 nC
- td(on) Turn-on delay time VDD = 300 V, ID = 10 A, RG = 4.7 Ω
- 13 ns
- tr Rise time VGS = 10
- 25 ns
- tf Fall time Figure 17. Switching time waveform)
- 50 ns
- ISDM
- 80 A
- trr Reverse recovery time
- 370 ns
- Qrr Reverse recovery charge TJ = 150 °C
- 7.5 μC
性能与环境
- VDS Drain-source voltage
- 600 V
- VGS Gate-source voltage
- ±30 V
- ID Drain current (continuous) at TC = 25 °C
- 20 A
- ID Drain current (continuous) at TC = 100 °C
- 12.6 A
- IDM(1) Drain current (pulsed)
- 80 A
- dv/dt(2) Peak diode recovery voltage slope
- 15 V/ns
- RthJC Thermal resistance, junction-to-case
- 0.89 °C/W
- RthJA Thermal resistance, junction-to-ambient
- 50 °C/W
- VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2
- 3 V
- current VGS = 0 V, VDS = 600 V, TC = 125 °C
- 100 µA
- VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA
- 3 V
- Rg Intrinsic gate resistance f = 1 MHz open drain
- 2.8 Ω
- ISD Source-drain current
- 20 A
- VSD(2) Forward on voltage ISD = 20 A, VGS = 0
- 1.5 V
- Reverse recovery current
- 31.6 A
- IRRM Reverse recovery current
- 32.5 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。