01 / 产品信息
产品概述
STM MOSFET STP9NK50Z 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- STM
- 型号
- STP9NK50Z
- 品类
- MOSFET
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
29 项结构与连接
- RDS(on) VGS = 10 V, ID = 3.6 A - 700 85
- 0
- V(BR)DSS ID = 1 mA, VGS = 0
- 500 V
- VGS = 0 V, VDS = 500
- 1
- RDS(on) VGS = 10 V, ID = 3.6
- 700 mΩ
- Ciss Input capacitance
- 910 pF
- Coss Output capacitance
- 125 pF
- Crss Reverse transfer capacitance
- 30 pF
- Qg Total gate charge VDD = 400 V, ID = 7.2 A
- 32 nC
- Qgs Gate-source charge VGS = 0 to 10
- 6 nC
- Qgd Gate-drain charge circuit for gate charge
- 18 nC
- td(on) Turn-on delay time VDD = 250 V, ID = 3.6 A
- 17 ns
- tr Rise time RG = 4.7 Ω, VGS = 10
- 20 ns
- td(off) Turn-off delay time (see the Figure 15. Test
- 45 ns
- tf Fall time Figure 20. Switching time
- 22 ns
- tf Fall time RG = 4.7 Ω, VGS = 10
- 13 ns
- tc Cross-over time
- 30 ns
- STB9NK50ZT4
- 0ZFP
- trr Reverse recovery time ISD = 7.2 A, di/dt = 100 A/μs
- 238 ns
- Qrr Reverse recovery charge
- 1.5 μC
性能与环境
- current - - 5
- 0
- IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V - - ±1
- 0
- current
- 50
- IGSS Gate body leakage current VDS = 0 V, VGS = ±20
- ±10 µA
- VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA
- 3.75 V
- tr(Voff) Off-voltage rise time VDD = 400 V, ID = 7.2 A
- 15 ns
- ISD Source-drain current
- 7.2 A
- ISDM (1) Source-drain current (pulsed)
- 28.8 A
- VSD (2) Forward on voltage ISD = 7.2 A, VGS = 0
- 1.6 V
- IRRM Reverse recovery current switching and diode recovery
- 12.6 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。