01 / 产品信息
产品概述
STM MOSFET STP21N90K5 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- STM
- 型号
- STP21N90K5
- 品类
- MOSFET
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
27 项结构与连接
- VGS = 0 V, VDS = 900
- 1
- VGS = 0 V, VDS = 900 V, TC = 125 °C
- 50
- Ciss Input capacitance
- 1645 pF
- Coss Output capacitance VDS = 100 V, f = 1 MHz, VGS = 0
- 112 pF
- Crss Reverse transfer capacitance
- 2 pF
- Co(tr)
- 133 pF
- Co(er)
- 16 pF
- Qg Total gate charge VDD = 720 V, ID = 18.5 A
- 43 nC
- Qgs Gate-source charge VGS = 0 to 10
- 12 nC
- Qgd Gate-drain charge charge behavior)
- 25 nC
- td(on) Turn-on delay time VDD = 720 V, ID = 10 A
- 17 ns
- tr Rise time RG = 4.7 Ω , VGS = 10
- 27 ns
- tf Fall time Figure 23. Switching time waveform)
- 40 ns
- trr Reverse recovery time ISD = 18.5 A, di/dt = 100 A/µs
- 548 ns
- Qrr Reverse recovery charge VDD = 60
- 12 μC
- Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C
- 15 μC
- STB21N90K5, STF21N90K5, STP21N90K
- 0K
性能与环境
- IGSS Gate body leakage current VGS = ±20 V, VDS= 0
- ±10 μA
- VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3
- 4 V
- RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 9
- 250 mΩ
- V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0
- 900 V
- VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA
- 4 V
- Rg Gate input resistance f = 1 MHz, ID = 0
- 4 Ω
- ISD Source-drain current
- 18.5 A
- ISDM(1) Source-drain current (pulsed)
- 74 A
- VSD(2) Forward on voltage ISD = 18.5 A, VGS = 0
- 1.5 V
- IRRM Reverse recovery current
- 46 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。