01 / 产品信息
产品概述
STM IGBT STGP19NC60KD 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- STM
- 型号
- STGP19NC60KD
- 品类
- IGBT
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
31 项结构与连接
- V(BR)CES VGE = 0 V, IC = 1 mA
- 600 V
- VGE = 15 V, IC = 12
- 2.0
- VGE = 0 V, VCE = 600
- 0.15
- VGE = 0 V, VCE = 600 V, TJ = 125 °C
- 1
- Cies Input capacitance
- 1170 pF
- Coes Output capacitance VCE = 25 V, f = 1 MHz, VGE = 0
- 127 pF
- Cres Reverse transfer capacitance
- 28 pF
- Qg Total gate charge
- 55 nC
- Qge Gate-emitter charge
- 11 nC
- Qgc Gate-collector charge
- 26 nC
- td(on) Turn-on delay time VCC = 480 V, IC = 12 A
- 30 ns
- td(off) Turn-off delay time RG = 10 Ω, VGE = 15
- 105 ns
- Eon(1) Turn-on switching energy VCE = 480 V, IC = 12 A
- 165 μJ
- Eoff(2) Turn-off switching energy RG = 10 Ω, VGE = 15
- 255 μJ
- Ets Total switching energy load switching
- 420 μJ
- Turn-off switching energy RG = 10 Ω, VGE = 15 V, TJ = 125 °C
- 445 μJ
- IF = 12
- 1.9
- IF = 12 A, TJ = 125 °C
- 1.6
- trr Reverse recovery time
- 31 ns
- G L=1
- 00 µH
- G D.U.T
- 25
- AM
- 01504v
性能与环境
- voltage VGE = 15 V, IC = 12 A, TJ = 125 °C
- 1.65
- VGE(th) Gate threshold voltage VCE = VGE, IC = 250 μA
- 6.5 V
- IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20
- ±100 nA
- tr Current rise time RG = 10 Ω, VGE = 15
- 8 ns
- tr Current rise time RG = 10 Ω, VGE = 15 V, TJ = 125 °C
- 8 ns
- tr(Voff) Off voltage rise time VCC = 480 V, IC = 12 A
- 35 ns
- tf Current fall time load switching and Figure 19. Switching
- 85 ns
- Irrm Reverse recovery current
- 2.0 A
- Irr Reverse recovery current reverse recovery waveform)
- 4 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。