01 / 产品信息
产品概述
VISHAY MOSFET SIHP21N60EF-GE3 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- VISHAY
- 型号
- SIHP21N60EF-GE3
- 品类
- MOSFET
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
38 项结构与连接
- Linear derating factor
- 1.8 W/°C
- Single pulse avalanche energy b
- 367 mJ
- Maximum power dissipation
- 227 W
- Reverse diode dV/dt d
- 50
- Maximum junction-to-ambient RthJA
- 62
- Maximum junction-to-case (drain) RthJC
- 0.55
- VDS = 480 V
- = 0 V
- Forward transconductance gfs VDS = 30 V, ID =
- 11 A -S
- Rise time tr VDD = 480 V, ID =
- 11 A 2
- Turn-off delay time td(off) Rg = 9.1 , VGS =
- 10 V 9
- dI/dt = 100 A/μs
- = 400 V
- S22-0948-Rev. D, 21-Nov-2022 2
- 91595
- VGS = ± 20
- ± 100 nA
- VGS = ± 30
- ±1 μA
- VDS = 480 V, VGS = 0
- 1
- VDS = 480 V, VGS = 0 V, TJ = 125 °C
- 500
- Forward transconductance gfs VDS = 30 V, ID = 11
- 7 S
- Input capacitance Ciss VGS = 0 V
- 2030
- Output capacitance Coss VDS = 100 V
- 105
- Reverse transfer capacitance Crss f = 1 MHz
- 5
- Co(er)
- 86
- Co(tr)
- 299
- Total gate charge Qg
- 56
- Gate-source charge Qgs VGS = 10 V ID = 11 A, VDS = 480
- 14 nC
- Gate-drain charge Qgd
- 24
- Turn-on delay time td(on)
- 21
- Rise time tr VDD = 480 V, ID = 11
- 31
- Turn-off delay time td(off) Rg = 9.1 , VGS = 10
- 59
性能与环境
- Drain-source voltage
- 600
- Gate-source voltage
- ± 30
- Drain-source voltage slope TJ = 125 °C
- 70
- Soldering recommendations (peak temperature) c For 10 s
- 300 °C
- Drain-source breakdown voltage VDS VGS = 0 V, ID = 2
- 50 μA -V
- Gate-source threshold Voltage (N) VGS(th) VDS = VGS, ID = 2
- 50 μA .0V
- Drain-source on-state resistance RDS(on) VGS = 10 V
- = 11 A 176
- Gate input resistance Rg f = 1 MHz, open d
- 0.2 .2
- Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA
- 600 V
- Drain-source on-state resistance RDS(on) VGS = 10 V ID = 11
- 0.153
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。