01 / 产品信息
产品概述
Longteng (龙腾半导体) LSGC10R062（SJ MOSFET(超级结)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 龙腾
- 型号
- LSGC10R062
- 品类
- SJ MOSFET(超级结)
- 封装
- SON
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
36 项结构与连接
- (TC = 25℃, Silicon limit)
- 114 A
- (TC = 25℃, Package limit)
- 120 A
- (TC = 100℃, Silicon limit)
- 81 A
- Avalanche energy 3)
- 256 mJ
- Power Dissipation
- 167 W
- RθJA
- 62 ℃/W
- Tsold
- 260 ℃
- VDS=100V, VGS=0V, TJ = 25℃
- 1 μA
- VDS=100V, VGS=0V, TJ = 175℃
- 300 μA
- VGS=10V, ID=50A, TJ= 25℃
- 5.5 mΩ
- Forward transconductance gfs VDS =20V, ID=50A
- 57.3 S
- Input capacitance Ciss
- 3488
- Output capacitance Coss
- 444.6 pF
- Reverse transfer capacitance Crss
- 22.8
- Turn-on delay time td(on)
- 81.2
- Rise time tr VDD = 50V, VGS =10V
- 136.6
- Turn-off delay time td(off) ID = 50A, Rg = 10Ω
- 142.2
- Fall time tf
- 70.3
- Gate to source charge Qgs
- 17.6
- Gate to drain charge Qgd VDS=50V, ID=50A
- 19.3 nC
- Gate charge total Qg VGS=0 to 10V
- 61
- Output Charge Qoss VDS=50V, VGS= 0V
- 57.5 nC
- Reverse Recovery Time trr IS=50A, di/dt=100A/us, TJ= 25℃
- 33.6 ns
- Reverse Recovery Charge Qrr
- 22.5 nC
性能与环境
- Drain-Source Voltage
- 100 V
- Gate-Source voltage
- ±20 V
- Thermal Resistance, Junction-to-Case RθJC
- 0.9 ℃/W
- Drain-source breakdown voltage BVDSS VGS=0 V, ID=250uA
- 100 V
- Gate threshold voltage VGS(th) VDS=VGS, ID=250uA
- 3.27 V
- Gate leakage current, Forward IGSSF VGS=20V, VDS=0V
- 100 nA
- Gate leakage current, Reverse IGSSR VGS=-20V, VDS=0V
- 100 nA
- Gate resistance Rg VGS=0V, VDS=0V, f=1MHz
- 1.4 Ω
- Gate plateau voltage Vplateau
- 5.4 V
- Continuous Source Current
- 114 A
- Diode Forward Voltage VSD VGS=0V, IS=50A, TJ= 25℃
- 1.1 V
- Peak reverse recovery current Irrm
- 1.07 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。