01 / 产品信息
产品概述
Longteng (龙腾半导体) LND18N50（MOSFET(高压)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 龙腾
- 型号
- LND18N50
- 品类
- MOSFET(高压)
- 封装
- TO-220F
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
33 项结构与连接
- ( TC = 25°C )
- 18 A
- ( TC = 100°C )
- 13.5 A
- Avalanche energy, single pulse 3)
- 810 mJ
- Power Dissipation
- 38 W
- RθJA
- 62 °C/W
- Tsold
- 260 °C
- LND18N50 TO-220F
- 8N50 50
- Input capacitance Ciss
- 3115
- Output capacitance Coss
- 284.4 pF
- Reverse transfer capacitance Crss
- 15.8
- Turn-on delay time td(on)
- 33.6
- Rise time tr VDD = 250V, ID = 18A
- 65.3
- Turn-off delay time td(off) RG = 10Ω, VGS= 10V
- 67.3
- Fall time tf
- 12.4
- Gate to source charge Qgs
- 13
- Gate to drain charge Qgd VDD= 400V, ID=18A
- 19.8 nC
- Gate charge total Qg VGS=0 to 10V
- 59.6
- Reverse recovery time trr
- 397.5 ns
- Reverse recovery charge Qrr
- 5.3 μC
性能与环境
- Drain-Source Voltage
- 500 V
- Gate-Source voltage
- ±30 V
- Operating and Storage Temperature Range TJ, TSTG -5
- 5 to +150 °C
- Continuous diode forward current
- 21 A
- Diode pulse current IS,pulse
- 84 A
- Thermal Resistance, Junction-to-Case RθJC
- 3.3 °C/W
- Drain-source breakdown voltage BVDSS VGS=0V, ID=0.25mA
- 500 V
- Gate threshold voltage VGS(th) VDS=VGS, ID=0.25mA
- 4.0 V
- Drain cut-off current IDSS VDS=500V, VGS=0 V,Tj = 25°C
- 1 μA
- Gate leakage current, Forward IGSSF VGS=30V, VDS=0V
- 100 nA
- Gate leakage current, Reverse IGSSR VGS=-30V, VDS=0V
- 100 nA
- Gate plateau voltage Vplateau
- 4.5 V
- Diode forward voltage VSD VGS= 0V, IF= 18A
- 1.3 V
- Peak reverse recovery current Irrm
- 20.52 A
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。