01 / 产品信息
产品概述
英飞凌 MOSFET IRLZ24NS 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- 英飞凌
- 型号
- IRLZ24NS
- 品类
- MOSFET
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
32 项结构与连接
- PD @TA = 25°C Power Dissipation
- 3.8 W
- PD @TC = 25°C Power Dissipation
- 45 W
- EAS Single Pulse Avalanche Energy
- 68 mJ
- EAR Repetitive Avalanche Energy
- 4.5 mJ
- dv/dt Peak Diode Recovery dv/dt
- 5.0 V/ns
- RθJC Junction-to-Case
- 3.3
- RθJA Junction-to-Ambient ( PCB Mounted,steady-state)**
- 40
- trr Reverse Recovery Time ––– 60
- 90
- Q rr Reverse Recovery Charge ––– 130 200
- 00A/µs
- gfs Forward Transconductance
- 8.3
- Gate-to-Source Forward Leakage
- 0 VGS=16V
- Gate-to-Source Reverse Leakage
- 00 VGS=-16V
- Qgs Gate-to-Source Charge
- 7
- Qgd Gate-to-Drain ("Miller") Charge
- 5
- td(on) Turn-On Delay Time
- 7.1 VDD=28V
- tr Rise Time
- 74 – ID=11A
- td(off) Turn-Off Delay Time
- 20
- tf Fall Time
- 29
- LS Internal Source Inductance
- 7.5 –––nH
- Ciss Input Capacitance
- 480
- Coss Output Capacitance
- 130
- Crss Reverse Transfer Capacitance
- 61
- trr Reverse Recovery Time
- 60
- Q rr Reverse Recovery Charge
- 130 2
性能与环境
- ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
- 18
- ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
- 13 A
- IDM Pulsed Drain Current
- 72
- VGS Gate-to-Source Voltage
- ±16 V
- IAR Avalanche Current
- 11 A
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 55
- RDS(on) Static Drain-to-Source On-Resistance
- 075
- VGS(th) Gate Threshold Voltage
- 1.0
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。