01 / 产品信息
产品概述
Infineon IRLTS2242TRPBF（MOSFET(HEXFET功率)）面向电机驱动、电源转换与功率放大等高压大电流应用。原装正品货源，Rds(on)、Vceo 与封装热性能以官方 Datasheet 为准。欢迎咨询批量报价与现货。
- 厂商
- 英飞凌
- 型号
- IRLTS2242TRPBF
- 品类
- MOSFET(HEXFET功率)
- 封装
- TSOP-6
- 包装
- 卷带
- 成色
- 全新原装
- 合规
- 符合 RoHS
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
32 项结构与连接
- PD @TA = 25°C Power Dissipation
- 2.0
- PD @TA = 70°C Power Dissipation
- 1.3
- Linear Derating Factor
- 0.02 W/°C
- IGSS Gate-to-Source Forward Leakage
- 100 VGS=-12V
- Gate-to-Source Reverse Leakage
- 100 VGS=12V
- gfs Forward Transconductance
- 8.5
- Qg Total Gate Charge
- 12 VDS=-10V
- Qgs Pre-Vth Gate-to-Source Charge
- 1.5
- Qgd Gate-to-Drain Charge
- 4.3 ID=-5.5A
- td(on) Turn-On Delay Time
- 5.8
- tr Rise Time
- 18
- td(off) Turn-Off Delay Time
- 81 RG=6.8
- tf Fall Time
- 68
- Ciss Input Capacitance
- 905 VGS=0V
- Coss Output Capacitance
- 280
- Crss Reverse Transfer Capacitance
- 200 ƒ=1.0KHz
- trr Reverse Recovery Time
- 41
- Qrr Reverse Recovery Charge
- 16
- RJA Junction-to-Ambient
- 62.5 °C/W
性能与环境
- VDS Drain-to-Source Voltage
- 20
- VGS Gate-to-Source Voltage
- ± 12
- ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V
- 6.9
- ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V
- 5.5 A
- IDM Pulsed Drain Current
- 55
- BVDSS Drain-to-Source Breakdown Voltage
- 20
- BVDSS/TJ Breakdown Voltage Temp. Coefficient
- 9.4
- RDS(on) Static Drain-to-Source On-Resistance
- 26
- VGS(th) Gate Threshold Voltage
- 1.1 V
- VGS(th) Gate Threshold Voltage Coefficient
- 3.8 mV/°CDS
- IDSS Drain-to-Source Leakage Current
- 1.0
- RG Gate Resistance
- 17
- VSD Diode Forward Voltage
- 1.2
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。