01 / 产品信息
产品概述
英飞凌 MOSFET IRFP4110PBF 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- 英飞凌
- 型号
- IRFP4110PBF
- 品类
- MOSFET
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
35 项结构与连接
- PD @TC = 25°C Maximum Power Dissipation
- 370 W
- Linear Derating Factor
- 2.5 W/°C
- dv/dt Peak Diode Recovery
- 5.3 V/ns
- EAS (Thermally limited) Single Pulse Avalanche Energy
- 190 mJ
- EAR Repetitive Avalanche Energy
- 37 mJ
- RJC Junction-to-Case
- 0.402
- RCS Case-to-Sink, Flat Greased Surface
- 0.24 °C/W
- RJA Junction-to-Ambient
- 40
- IGSS Gate-to-Source Forward Leakage
- 100
- Gate-to-Source Reverse Leakage
- 00 VGS=-20V
- gfs Forward Transconductance
- 160
- Qg Total Gate Charge
- 50 ID=75A
- Qgs Gate-to-Source Charge
- 35
- Qgd Gate-to-Drain ("Miller") Charge
- 43 VGS=10V
- td(on) Turn-On Delay Time
- 25 VDD=65V
- tr Rise Time
- 67 ID=75A
- td(off) Turn-Off Delay Time
- 78 RG=2.6
- tf Fall Time
- 88 VGS=10V
- Ciss Input Capacitance
- 620 – VGS=0V
- Coss Output Capacitance
- 70 VDS=50V
- Crss Reverse Transfer Capacitance
- 50
- (Energy Related)
- 20
- (Time Related)
- 95
- trr Reverse Recovery Time
- 50
- Qrr Reverse Recovery Charge
- 94
性能与环境
- IDM Pulsed Drain Current
- 670
- VGS Gate-to-Source Voltage
- ± 20 V
- IAR Avalanche Current
- 108 A
- V(BR)DSS Drain-to-Source Breakdown Voltage
- 100
- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
- 108
- RDS(on) Static Drain-to-Source On-Resistance
- 4.5
- VGS(th) Gate Threshold Voltage
- 4.0
- IDSS Drain-to-Source Leakage Current
- 20
- VSD Diode Forward Voltage
- 1.3
- IRRM Reverse Recovery Current
- 3.5 ATJ=25°C
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。