01 / 产品信息
产品概述
VISHAY MOSFET IRFBE30PBF 为原装正品元器件，适用于相关电路设计与批量采购。我们提供完整规格资料、规格书与灵活报价，支持小批量试样与长期稳定供货。
- 厂商
- VISHAY
- 型号
- IRFBE30PBF
- 品类
- MOSFET
- 成色
- 全新原装
- 生命周期
- 与原厂确认
- 交期 / 最小起订量
- 以报价为准
02 / 技术资料
技术参数
33 项结构与连接
- Linear derating factor
- 1.0 W/°C
- Single pulse avalanche energy b
- 260 mJ
- Repetitive avalanche energy a
- 13 mJ
- Maximum power dissipation TC = 25 °C
- 125 W
- Peak diode recovery dV/dt c dV/dt
- 2.0 V/ns
- Maximum junction-to-ambient RthJA
- 62
- Case-to-sink, flat, greased surface RthCS
- 0.50 °C/W
- Maximum junction-to-case (drain) RthJC
- 1.0
- Gate-source leakage IGSS VGS = ± 20
- ± 100 nA
- VDS = 800 V, VGS = 0
- 100
- VDS = 640 V, VGS = 0 V, TJ = 125 °C
- 500
- Forward transconductance gfs VDS = 100 V, ID = 2.5 A b
- 2.5 S
- Input capacitance Ciss VGS = 0 V
- 1300
- Output capacitance Coss VDS = 25 V
- 310 pF
- Reverse transfer capacitance Crss f = 1.0 MHz, see fig. 5
- 190
- Total gate charge Qg
- 78
- Gate-source charge Qgs VGS = 10
- 9.6 nC
- Gate-drain charge Qgd
- 45
- Turn-on delay time td(on)
- 12
- Rise time tr VDD = 400 V, ID = 4.1
- 33
- Fall time tf
- 30
- Internal drain inductance
- 4.5
- Internal source inductance LS die contact
- 7.5
- Body diode reverse recovery time trr
- 480 ns
- Body diode reverse recovery charge Qrr
- 1.8 μC
性能与环境
- Drain-source voltage
- 800
- Gate-source voltage
- ± 20
- Repetitive avalanche current a
- 4.1 A
- Soldering recommendations (peak temperature) d For 10 s
- 300
- Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA
- 800 V
- Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA
- 4.0 V
- Gate input resistance Rg f = 1 MHz, open drain
- 1.6 Ω
- Body diode voltage VSD TJ = 25 °C, IS = 4.1 A, VGS = 0 V b
- 1.8 V
03 / 原厂资料
规格与文档
请使用原厂官方文档，在设计定稿前核对电气特性、封装尺寸与工作限值。
请确认当前库存、生产日期代码、包装、价格与交货条款。产品信息不构成约束性报价，最终规格以报价为准。